ZTX658
- Mfr.Part #
- ZTX658
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 0.5A E-LINE
- Stock
- 58,090
- In Stock :
- 58,090
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 50MHz
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 1W
- Mount :
- Through Hole
- Packaging :
- Bulk
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -55°C~200°C TJ
- Collector Emitter Saturation Voltage :
- 500mV
- Package / Case :
- E-Line-3
- Width :
- 2.41mm
- Emitter Base Voltage (VEBO) :
- 5V
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 400V
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Voltage - Rated DC :
- 400V
- Published :
- 2006
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Polarity/Channel Type :
- NPN
- Height :
- 4.01mm
- Power Dissipation :
- 1W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 400V
- Continuous Collector Current :
- 500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 5V
- Frequency :
- 50MHz
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Max Collector Current :
- 500mA
- Terminal Form :
- Wire
- Terminal Position :
- BOTTOM
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Weight :
- 453.59237mg
- Transistor Application :
- SWITCHING
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 10mA, 100mA
- Manufacturer Package Identifier :
- E-Line
- Transistor Element Material :
- SILICON
- Current Rating :
- 500mA
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Length :
- 4.77mm
- Transition Frequency :
- 50MHz
- JEDEC-95 Code :
- TO-92
- Number of Pins :
- 3
- Terminal Finish :
- Matte Tin (Sn)
- Collector Base Voltage (VCBO) :
- 400V
- Pin Count :
- 3
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- ZTX658
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NPN -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3 Bulk Through Hole
ZTX658 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 10mA, 100mA.Continuous collector voltages of 500mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 50MHz.During maximum operation, collector current can be as low as 500mA volts.
ZTX658 Features
the DC current gain for this device is 50 @ 100mA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 50MHz
ZTX658 Applications
There are a lot of Diodes Incorporated
ZTX658 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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