ZTX651STZ
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- Mfr.Part #
- ZTX651STZ
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3, Formed Leads
- Datasheet
- Download
- Description
- TRANS NPN 60V 2A E-LINE
- Stock
- 48,530
- In Stock ：
- 48,530
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Continuous Collector Current :
- 2A
- Reference Standard :
- CECC
- DC Current Gain-Min (hFE) :
- 40
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Width :
- 2.41mm
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Wire
- Power Dissipation :
- 1W
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 5V
- Max Power Dissipation :
- 1W
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Collector Emitter Breakdown Voltage :
- 60V
- Transistor Type :
- NPN
- Current Rating :
- 2A
- Gain Bandwidth Product :
- 175MHz
- Terminal Finish :
- Matte Tin (Sn)
- Collector Emitter Saturation Voltage :
- 230mV
- Transition Frequency :
- 140MHz
- Max Breakdown Voltage :
- 60V
- Number of Elements :
- 1
- Voltage - Rated DC :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 60V
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- SWITCHING
- Package / Case :
- E-Line-3, Formed Leads
- Max Collector Current :
- 2A
- Mounting Type :
- Through Hole
- Published :
- 2006
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Height :
- 4.01mm
- Base Part Number :
- ZTX651
- Weight :
- 453.59237mg
- Operating Temperature :
- -55°C~200°C TJ
- Packaging :
- Tape and Box (TB)
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Transistor Element Material :
- SILICON
- Length :
- 4.77mm
- REACH SVHC :
- No SVHC
- Frequency :
- 175MHz
- Collector Base Voltage (VCBO) :
- 80V
- Factory Lead Time :
- 15 Weeks
- Element Configuration :
- Single
- Datasheets
- ZTX651STZ
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NPN -55°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3, Formed Leads Tape & Box (TB) Through Hole
ZTX651STZ Overview
This system offers maximum design flexibility due to a collector emitter saturation voltage of 230mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 200mA, 2A.A 2A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 2A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 140MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
ZTX651STZ Features
a collector emitter saturation voltage of 230mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 140MHz
ZTX651STZ Applications
There are a lot of Diodes Incorporated
ZTX651STZ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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