ZTX457STZ
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- Mfr.Part #
- ZTX457STZ
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3, Formed Leads
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.5A E-LINE
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Number of Pins :
- 3
- Base Part Number :
- ZTX457
- REACH SVHC :
- No SVHC
- Published :
- 2006
- Max Collector Current :
- 500mA
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Package / Case :
- E-Line-3, Formed Leads
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Packaging :
- Tape and Box (TB)
- Max Power Dissipation :
- 1W
- Weight :
- 453.59237mg
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Height :
- 4.01mm
- Width :
- 2.41mm
- Factory Lead Time :
- 15 Weeks
- Pin Count :
- 3
- Voltage - Rated DC :
- 300V
- Current Rating :
- 500mA
- RoHS Status :
- ROHS3 Compliant
- Gain Bandwidth Product :
- 75MHz
- Continuous Collector Current :
- 500mA
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 50mA 10V
- Mount :
- Through Hole
- Collector Emitter Saturation Voltage :
- 300mV
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 300V
- Operating Temperature :
- -55°C~200°C TJ
- Collector Emitter Voltage (VCEO) :
- 300V
- Emitter Base Voltage (VEBO) :
- 5V
- Length :
- 4.77mm
- Collector Emitter Breakdown Voltage :
- 300V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- ZTX457STZ
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NPN -55°C~200°C TJ 100nA ICBO E-Line-3, Formed Leads Tape & Box (TB) Through Hole
ZTX457STZ Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 50 @ 50mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 300mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 10mA, 100mA.Single BJT transistor is recommended to keep the continuous collector voltage at 500mA in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
ZTX457STZ Features
the DC current gain for this device is 50 @ 50mA 10V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
ZTX457STZ Applications
There are a lot of Diodes Incorporated
ZTX457STZ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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