ZTX457STOA
- Mfr.Part #
- ZTX457STOA
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3, Formed Leads
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.5A E-LINE
- Stock
- 43,259
- In Stock :
- 43,259
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 300V
- Height :
- 4.01mm
- Gain Bandwidth Product :
- 75MHz
- Published :
- 2012
- Terminal Finish :
- Matte Tin (Sn)
- Voltage - Rated DC :
- 300V
- Pin Count :
- 3
- RoHS Status :
- RoHS Compliant
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Width :
- 2.41mm
- Emitter Base Voltage (VEBO) :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- E-Line-3, Formed Leads
- JESD-609 Code :
- e3
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 1W
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Base Part Number :
- ZTX457
- Lead Free :
- Lead Free
- Length :
- 4.77mm
- Transistor Application :
- SWITCHING
- Max Collector Current :
- 500mA
- Mount :
- Through Hole
- REACH SVHC :
- No SVHC
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 50mA 10V
- Transition Frequency :
- 75MHz
- Collector Emitter Voltage (VCEO) :
- 300V
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- 300V
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Current Rating :
- 500mA
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~200°C TJ
- Transistor Type :
- NPN
- Weight :
- 453.59237mg
- Continuous Collector Current :
- 500mA
- HTS Code :
- 8541.29.00.75
- Terminal Form :
- Wire
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Datasheets
- ZTX457STOA
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NPN -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3, Formed Leads Tape & Reel (TR) Through Hole
ZTX457STOA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 50 @ 50mA 10V.When VCE saturation is 300mV @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 500mA for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.In the part, the transition frequency is 75MHz.A maximum collector current of 500mA volts can be achieved.
ZTX457STOA Features
the DC current gain for this device is 50 @ 50mA 10V
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 75MHz
ZTX457STOA Applications
There are a lot of Diodes Incorporated
ZTX457STOA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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