ZTX1151A

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Mfr.Part #
ZTX1151A
Manufacturer
Diodes Incorporated
Package / Case
E-Line-3
Datasheet
Download
Description
TRANS PNP 40V 3A E-LINE
Stock
40,370
In Stock :
40,370

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Base Voltage (VCBO) :
-45V
DC Current Gain (hFE) (Min) @ Ic, Vce :
250 @ 500mA 2V
Number of Terminations :
3
Voltage - Rated DC :
-40V
Mount :
Through Hole
Transistor Type :
PNP
Polarity/Channel Type :
PNP
RoHS Status :
RoHS Compliant
Collector Emitter Saturation Voltage :
-180mV
Max Collector Current :
3A
Length :
4.95mm
Weight :
453.59237mg
Gain Bandwidth Product :
145MHz
Package / Case :
E-Line-3
Lead Free :
Contains Lead
Base Part Number :
ZTX1151A
Packaging :
Bulk
Current Rating :
-3A
Qualification Status :
Not Qualified
ECCN Code :
EAR99
Height :
4.95mm
Frequency :
145MHz
Terminal Form :
Wire
Number of Elements :
1
Transition Frequency :
145MHz
Emitter Base Voltage (VEBO) :
-5V
Collector Emitter Voltage (VCEO) :
240mV
Operating Temperature :
-55°C~200°C TJ
Element Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Through Hole
Width :
3.94mm
Continuous Collector Current :
-3A
Collector Emitter Breakdown Voltage :
40V
Pin Count :
3
Vce Saturation (Max) @ Ib, Ic :
240mV @ 250mA, 3A
Max Power Dissipation :
1W
Power Dissipation :
1W
Number of Pins :
3
Transistor Element Material :
SILICON
Current - Collector Cutoff (Max) :
100nA
hFE Min :
270
Datasheets
ZTX1151A
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated ZTX1151A from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:E-Line-3, Base Part Number:ZTX1151A, Operating Temperature:-55°C~200°C TJ, Mounting Type:Through Hole, Number of Pins:3, ZTX1151A pinout, ZTX1151A datasheet PDF, ZTX1151A amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated ZTX1151A ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated ZTX1151A


PNP -55°C~200°C TJ 100nA 1 Elements 3 Terminations SILICON PNP E-Line-3 Bulk Through Hole

ZTX1151A Overview


This device has a DC current gain of 250 @ 500mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -180mV.A VCE saturation (Max) of 240mV @ 250mA, 3A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -3A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -3A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 145MHz.A maximum collector current of 3A volts is possible.

ZTX1151A Features


the DC current gain for this device is 250 @ 500mA 2V
a collector emitter saturation voltage of -180mV
the vce saturation(Max) is 240mV @ 250mA, 3A
the emitter base voltage is kept at -5V
the current rating of this device is -3A
a transition frequency of 145MHz


ZTX1151A Applications


There are a lot of Diodes Incorporated
ZTX1151A applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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