ZTX1051A
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- Mfr.Part #
- ZTX1051A
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 4A E-LINE
- Stock
- 16,278
- In Stock ：
- 16,278
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Current Rating :
- 4A
- Voltage - Rated DC :
- 40V
- Packaging :
- Bulk
- Vce Saturation (Max) @ Ib, Ic :
- 210mV @ 100mA, 4A
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 155MHz
- Published :
- 2012
- Current - Collector Cutoff (Max) :
- 10nA
- Frequency :
- 155MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Type :
- NPN
- Pbfree Code :
- No
- Weight :
- 453.59237mg
- Element Configuration :
- Single
- Transistor Application :
- AMPLIFIER
- Collector Emitter Voltage (VCEO) :
- 40V
- Height :
- 4.01mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 4.77mm
- hFE Min :
- 300
- Number of Terminations :
- 3
- Package / Case :
- E-Line-3
- Width :
- 2.41mm
- Terminal Form :
- Wire
- Peak Reflow Temperature (Cel) :
- 260
- Continuous Collector Current :
- 4A
- Operating Temperature :
- -55°C~200°C TJ
- Factory Lead Time :
- 15 Weeks
- Number of Pins :
- 3
- Max Power Dissipation :
- 1W
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5V
- Mount :
- Through Hole
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 40V
- Radiation Hardening :
- No
- Base Part Number :
- ZTX1051A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 1A 2V
- Transition Frequency :
- 155MHz
- Max Collector Current :
- 4A
- Power Dissipation :
- 1W
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Matte Tin (Sn)
- Collector Base Voltage (VCBO) :
- 150V
- Lead Free :
- Lead Free
- Datasheets
- ZTX1051A
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NPN -55°C~200°C TJ 10nA 1 Elements 3 Terminations SILICON NPN E-Line-3 Bulk Through Hole
ZTX1051A Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 300 @ 1A 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 210mV @ 100mA, 4A.Single BJT transistor is recommended to keep the continuous collector voltage at 4A in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 4A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 155MHz.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.
ZTX1051A Features
the DC current gain for this device is 300 @ 1A 2V
the vce saturation(Max) is 210mV @ 100mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 155MHz
ZTX1051A Applications
There are a lot of Diodes Incorporated
ZTX1051A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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