ZTX1149A
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- Mfr.Part #
- ZTX1149A
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS PNP 25V 3A E-LINE
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 135MHz
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Saturation Voltage :
- -200mV
- Number of Pins :
- 3
- Terminal Form :
- Wire
- Transistor Type :
- PNP
- Transistor Application :
- AMPLIFIER
- Polarity/Channel Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 25V
- Pin Count :
- 3
- Factory Lead Time :
- 15 Weeks
- Width :
- 2.41mm
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- E-Line-3
- Continuous Collector Current :
- -3A
- Terminal Finish :
- Matte Tin (Sn)
- Collector Base Voltage (VCBO) :
- 30V
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 25V
- Pbfree Code :
- No
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 500mA 2V
- Published :
- 2012
- Operating Temperature :
- -55°C~200°C TJ
- Weight :
- 453.59237mg
- Max Collector Current :
- 3A
- Voltage - Rated DC :
- -25V
- Base Part Number :
- ZTX1149A
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- -5V
- Current Rating :
- -3A
- Number of Terminations :
- 3
- Max Breakdown Voltage :
- 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 70mA, 3A
- Current - Collector Cutoff (Max) :
- 100nA
- Power Dissipation :
- 1W
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 135MHz
- Transition Frequency :
- 135MHz
- Height :
- 4.01mm
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 1W
- Length :
- 4.77mm
- Packaging :
- Bulk
- REACH SVHC :
- No SVHC
- Datasheets
- ZTX1149A
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PNP -55°C~200°C TJ 100nA 1 Elements 3 Terminations SILICON PNP E-Line-3 Bulk Through Hole
ZTX1149A Overview
DC current gain in this device equals 250 @ 500mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -200mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 70mA, 3A.Single BJT transistor is essential to maintain the continuous collector voltage at -3A to achieve high efficiency.An emitter's base voltage can be kept at -5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -3A current rating.As a result, the part has a transition frequency of 135MHz.Breakdown input voltage is 25V volts.In extreme cases, the collector current can be as low as 3A volts.
ZTX1149A Features
the DC current gain for this device is 250 @ 500mA 2V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 300mV @ 70mA, 3A
the emitter base voltage is kept at -5V
the current rating of this device is -3A
a transition frequency of 135MHz
ZTX1149A Applications
There are a lot of Diodes Incorporated
ZTX1149A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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