ZDT6702TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Terminal Finish :

Matte Tin (Sn)

Current - Collector Cutoff (Max) :

500nA

Emitter Base Voltage (VEBO) :

10V

Time@Peak Reflow Temperature-Max (s) :

40

Max Power Dissipation :

2.75W

Published :

2000

Number of Elements :

2

Collector Emitter Voltage (VCEO) :

60V

Number of Pins :

8

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

5000 @ 500mA 5V / 2000 @ 500mA 5V

Width :

3.7mm

Transistor Element Material :

SILICON

Collector Base Voltage (VCBO) :

80V

Max Collector Current :

1.75A

Continuous Collector Current :

1.75A

Height :

1.6mm

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Transistor Type :

NPN, PNP Darlington (Dual)

Pbfree Code :

No

Element Configuration :

Dual

Packaging :

Tape and Reel (TR)

Number of Terminations :

8

Pin Count :

8

Collector Emitter Breakdown Voltage :

60V

Max Breakdown Voltage :

60V

ECCN Code :

EAR99

Radiation Hardening :

No

Package / Case :

8-SMD, Gull Wing

Length :

6.7mm

Factory Lead Time :

17 Weeks

Vce Saturation (Max) @ Ib, Ic :

1.28V @ 2mA, 1.75A

Transition Frequency :

150MHz

Base Part Number :

ZDT6702

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Current Rating :

2A

Gain Bandwidth Product :

140MHz

Lead Free :

Lead Free

Polarity :

NPN, PNP

Max Frequency :

140MHz