ZDT605TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Terminal Finish :

MATTE TIN

Max Power Dissipation :

2.75W

Qualification Status :

Not Qualified

Number of Elements :

2

Peak Reflow Temperature (Cel) :

260

Base Part Number :

ZDT605

RoHS Status :

RoHS Compliant

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

2000 @ 1A 5V

Continuous Collector Current :

1A

Published :

1997

Reach Compliance Code :

Unknown

Frequency - Transition :

150MHz

Collector Emitter Breakdown Voltage :

120V

Current Rating :

1A

Mounting Type :

Surface Mount

Collector Emitter Voltage (VCEO) :

1.5V

Polarity :

NPN

Transistor Element Material :

SILICON

Max Breakdown Voltage :

120V

hFE Min :

2000

Power Dissipation :

2.75W

Packaging :

Tape and Reel (TR)

Package / Case :

8-SMD, Gull Wing

Transistor Type :

2 NPN Darlington (Dual)

Collector Base Voltage (VCBO) :

140V

Number of Terminations :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

8

Time@Peak Reflow Temperature-Max (s) :

40

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Mount :

Surface Mount

Current - Collector Cutoff (Max) :

10μA

Emitter Base Voltage (VEBO) :

10V

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 1mA, 1A

Voltage - Rated DC :

120V

Transition Frequency :

150MHz

JESD-609 Code :

e3

Max Collector Current :

1A

Pin Count :

8

Configuration :

2 BANKS, DARLINGTON