ZDM4306NTC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

60V

Turn On Delay Time :

8 ns

Qualification Status :

Not Qualified

Base Part Number :

ZDM4306N

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Current Rating :

1.3A

Package / Case :

8-SMD, Gull Wing

Rds On (Max) @ Id, Vgs :

330m Ω @ 3A, 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Type :

2 N-Channel (Dual)

Drain-source On Resistance-Max :

0.33Ohm

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Number of Channels :

2

Reach Compliance Code :

Unknown

Power Dissipation :

3W

Width :

3.7mm

ECCN Code :

EAR99

Feedback Cap-Max (Crss) :

30 pF

Height :

1.6mm

Rise Time :

25ns

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

Number of Terminations :

8

Terminal Finish :

MATTE TIN

Mounting Type :

Surface Mount

Voltage - Rated DC :

60V

Time@Peak Reflow Temperature-Max (s) :

40

Lead Free :

Lead Free

Drain Current-Max (Abs) (ID) :

2A

JESD-30 Code :

R-PDSO-G8

FET Feature :

Standard

RoHS Status :

RoHS Compliant

Continuous Drain Current (ID) :

2A

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

3V @ 1mA

Length :

6.7mm

Number of Elements :

2

Max Power Dissipation :

3W

Pin Count :

8

Fall Time (Typ) :

16 ns

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Turn-Off Delay Time :

30 ns

Operating Mode :

ENHANCEMENT MODE