ZDM4206NTC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mount :

Surface Mount

Number of Elements :

2

Input Capacitance (Ciss) (Max) @ Vds :

100pF @ 25V

Qualification Status :

Not Qualified

Base Part Number :

ZDM4206N

ECCN Code :

EAR99

Reach Compliance Code :

Unknown

Rise Time :

12ns

Rds On (Max) @ Id, Vgs :

1 Ω @ 1.5A, 10V

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

FET Type :

2 N-Channel (Dual)

JESD-609 Code :

e3

Power Dissipation :

2.75W

Vgs(th) (Max) @ Id :

3V @ 1mA

Drain-source On Resistance-Max :

1Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Length :

6.7mm

Package / Case :

8-SMD, Gull Wing

Current Rating :

1A

Drain Current-Max (Abs) (ID) :

1A

Voltage - Rated DC :

60V

Terminal Finish :

MATTE TIN

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Height :

1.6mm

Operating Temperature :

-55°C~150°C TJ

FET Feature :

Logic Level Gate

Fall Time (Typ) :

15 ns

Width :

3.7mm

RoHS Status :

RoHS Compliant

Turn-Off Delay Time :

12 ns

Pin Count :

8

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

60V

Number of Terminations :

8

Continuous Drain Current (ID) :

1A

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-PDSO-G8

Max Power Dissipation :

2.75W

Turn On Delay Time :

8 ns

Number of Channels :

2

Gate to Source Voltage (Vgs) :

20V