ZDM4206NTC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Input Capacitance (Ciss) (Max) @ Vds :

100pF @ 25V

Base Part Number :

ZDM4206N

Current Rating :

1A

Width :

3.7mm

RoHS Status :

RoHS Compliant

Turn On Delay Time :

8 ns

Transistor Element Material :

SILICON

Power Dissipation :

2.75W

Fall Time (Typ) :

15 ns

Reach Compliance Code :

Unknown

Rds On (Max) @ Id, Vgs :

1 Ω @ 1.5A, 10V

Number of Channels :

2

Continuous Drain Current (ID) :

1A

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

FET Feature :

Logic Level Gate

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

2

Length :

6.7mm

Drain to Source Breakdown Voltage :

60V

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

8

Turn-Off Delay Time :

12 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rise Time :

12ns

Height :

1.6mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

3V @ 1mA

JESD-30 Code :

R-PDSO-G8

Mounting Type :

Surface Mount

Voltage - Rated DC :

60V

JESD-609 Code :

e3

Package / Case :

8-SMD, Gull Wing

Packaging :

Tape and Reel (TR)

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

1A

Max Power Dissipation :

2.75W

Mount :

Surface Mount

Terminal Finish :

MATTE TIN

Operating Temperature :

-55°C~150°C TJ

Pin Count :

8

Drain-source On Resistance-Max :

1Ohm

FET Type :

2 N-Channel (Dual)