W947D2HBJX6E
- Mfr.Part #
- W947D2HBJX6E
- Manufacturer
- Winbond Electronics Corporation
- Package / Case
- 90-TFBGA
- Datasheet
- Download
- Description
- IC DRAM 128MBIT PARALLEL 90VFBGA
- Stock
- 21,906
- In Stock :
- 21,906
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- Manufacturer :
- Winbond Electronics Corporation
- Product Category :
- Memory
- Interleaved Burst Length :
- 24816
- Operating Temperature :
- -25°C~85°C TC
- Sequential Burst Length :
- 24816
- Memory Size :
- 128Mb 4M x 32
- Package / Case :
- 90-TFBGA
- Number of Pins :
- 90
- Address Bus Width :
- 14b
- Clock Frequency :
- 166MHz
- Nominal Supply Current :
- 50mA
- Write Cycle Time - Word, Page :
- 15ns
- Output Characteristics :
- 3-STATE
- Height Seated (Max) :
- 1.025mm
- Memory Interface :
- Parallel
- Density :
- 128 Mb
- Qualification Status :
- Not Qualified
- Supply Voltage :
- 1.8V
- I/O Type :
- COMMON
- Supply Voltage-Max (Vsup) :
- 1.95V
- Length :
- 13mm
- Number of Functions :
- 1
- Supply Voltage-Min (Vsup) :
- 1.7V
- Pin Count :
- 90
- Published :
- 2011
- ECCN Code :
- EAR99
- Packaging :
- Tray
- Standby Current-Max :
- 0.00001A
- Access Time :
- 5ns
- Memory Width :
- 32
- RoHS Status :
- ROHS3 Compliant
- Memory Type :
- Volatile
- Operating Supply Voltage :
- 1.8V
- Terminal Pitch :
- 0.8mm
- Mounting Type :
- Surface Mount
- Additional Feature :
- AUTO/SELF REFRESH
- Organization :
- 4MX32
- Operating Mode :
- SYNCHRONOUS
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Number of Terminations :
- 90
- Number of Ports :
- 1
- HTS Code :
- 8542.32.00.02
- Memory Format :
- DRAM
- Mount :
- Surface Mount
- Terminal Position :
- BOTTOM
- Voltage - Supply :
- 1.7V~1.95V
- Refresh Cycles :
- 4096
- Factory Lead Time :
- 10 Weeks
- Datasheets
- W947D2HBJX6E

Memory Winbond Electronics Corporation W947D2HBJX6E Overview
The Winbond Electronics Corporation W947D2HBJX6E is a sophisticated high-capacity Integrated Circuit that provides a robust memory solution for a wide array of advanced electronics. Offering a substantial 128Mbit storage capability, this IC employs a parallel communication interface encapsulated in a compact, highly efficient 90VFBGA package. Meticulously engineered by Winbond, a leading innovator in semiconductor solutions, the W947D2HBJX6E stands out for its reliability, performance, and flexibility—qualities that make it an ideal choice for manufacturers seeking to enhance their products with top-tier memory components. The strategic integration of the W947D2HBJX6E into system designs can significantly augment functionality, thereby satisfying the rigorous demands of modern technology applications that require dense, rapid-access memory.
W947D2HBJX6E Features
- Memory Type: DRAM
- Memory Size: 128Mbit
- Interface Type: Parallel
- Package / Case: 90VFBGA
- Operating Temperature Range: Standard industrial operating temperatures
- Data Rate: High performance suitable for intensive applications
- Voltage Supply: Compatible with standard IC power requirements
W947D2HBJX6E Applications
- Embedded Systems: Enhances performance in complex processing environments by providing rapid data access and storage.
- Telecommunications Equipment: Offers the necessary data buffer for managing extensive communication protocols and processing tasks.
- Automotive Electronics: Improves the responsiveness and capability of in-vehicle systems that require reliable and fast memory.
- Industrial Control Systems: Allows for advanced control and process management by facilitating large-scale data handling.
- Consumer Electronics: Essential for multimedia devices, gaming consoles, and home entertainment systems demanding high memory throughput.
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