W947D2HBJX5E
- Mfr.Part #
- W947D2HBJX5E
- Manufacturer
- Winbond Electronics Corporation
- Package / Case
- 90-TFBGA
- Datasheet
- Download
- Description
- IC DRAM 128MBIT PARALLEL 90VFBGA
- Stock
- 2,734
- In Stock :
- 2,734
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- Manufacturer :
- Winbond Electronics Corporation
- Product Category :
- Memory
- Output Characteristics :
- 3-STATE
- Memory Width :
- 32
- Published :
- 2011
- Terminal Pitch :
- 0.8mm
- Operating Mode :
- SYNCHRONOUS
- Operating Temperature :
- -25°C~85°C TC
- Supply Voltage :
- 1.8V
- Additional Feature :
- AUTO/SELF REFRESH
- Packaging :
- Tray
- Memory Type :
- Volatile
- Access Time :
- 5ns
- Interleaved Burst Length :
- 24816
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Operating Supply Voltage :
- 1.8V
- HTS Code :
- 8542.32.00.02
- Package / Case :
- 90-TFBGA
- Voltage - Supply :
- 1.7V~1.95V
- Supply Voltage-Max (Vsup) :
- 1.95V
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 90
- Write Cycle Time - Word, Page :
- 15ns
- Memory Format :
- DRAM
- Refresh Cycles :
- 4096
- Mount :
- Surface Mount
- Nominal Supply Current :
- 55mA
- Organization :
- 4MX32
- Memory Interface :
- Parallel
- Pin Count :
- 90
- Number of Functions :
- 1
- Number of Ports :
- 1
- Standby Current-Max :
- 0.00001A
- Sequential Burst Length :
- 24816
- Number of Terminations :
- 90
- Density :
- 128 Mb
- Address Bus Width :
- 14b
- ECCN Code :
- EAR99
- Qualification Status :
- Not Qualified
- Supply Voltage-Min (Vsup) :
- 1.7V
- Height Seated (Max) :
- 1.025mm
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 10 Weeks
- Terminal Position :
- BOTTOM
- Memory Size :
- 128Mb 4M x 32
- Clock Frequency :
- 200MHz
- Length :
- 13mm
- I/O Type :
- COMMON
- Datasheets
- W947D2HBJX5E

Memory Winbond Electronics Corporation W947D2HBJX5E Overview
The Winbond Electronics Corporation W947D2HBJX5E is a high-performance 128Mbit DRAM chip designed to meet the demanding requirements of contemporary electronic applications. Engineered using Winbond's advanced technology, this memory module offers a robust parallel interface and is packaged in a compact 90VFBGA format. This product is an essential component for systems requiring high-speed data processing and substantial storage capacity. The integration of such Memory Winbond Electronics Corporation W947D2HBJX5E into your systems ensures reliability and performance, making it an ideal choice for businesses seeking to leverage advanced memory technology for enhanced system efficiency and capability.
W947D2HBJX5E Features
The W947D2HBJX5E DRAM chip offers several features beneficial for high-performance computing and electronics. It operates at a low voltage, providing a cost-effective solution for managing power efficiency in complex circuits. The compact 90VFBGA package ensures minimized space on the circuit board, allowing for denser configurations and reduced system size. Its robust data transfer capabilities make it suitable for applications demanding high-speed memory access and reliability.
W947D2HBJX5E Applications
- Consumer Electronics: Utilized in devices such as smartphones, tablets, and gaming consoles where high-speed data processing and memory storage are crucial.
- Telecommunication Equipment: Serves in various telecom systems, facilitating rapid data transmission and efficient handling of multiple operations concurrently.
- Automotive Systems: Employed in advanced driver-assistance systems (ADAS) and infotainment systems, where quick access to data enhances both performance and safety.
- Industrial Automation: Critical in control systems for real-time processing and management of large volumes of data.
- Networking Hardware: Integral to routers and switches, improving bandwidth and data flow management across networks.
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