W947D2HBJX5I
- Mfr.Part #
- W947D2HBJX5I
- Manufacturer
- Winbond Electronics Corporation
- Package / Case
- 90-TFBGA
- Datasheet
- Download
- Description
- IC DRAM 128MBIT PARALLEL 90VFBGA
- Stock
- 33,838
- In Stock :
- 33,838
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- Manufacturer :
- Winbond Electronics Corporation
- Product Category :
- Memory
- Terminal Pitch :
- 0.8mm
- Operating Temperature :
- -40°C~85°C TA
- Mount :
- Surface Mount
- Operating Supply Voltage :
- 1.8V
- Density :
- 128 Mb
- Mounting Type :
- Surface Mount
- Pin Count :
- 90
- Organization :
- 4MX32
- Supply Voltage-Max (Vsup) :
- 1.95V
- Clock Frequency :
- 200MHz
- Memory Type :
- Volatile
- Packaging :
- Tray
- Published :
- 2011
- Refresh Cycles :
- 4096
- Sequential Burst Length :
- 24816
- Number of Terminations :
- 90
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Package / Case :
- 90-TFBGA
- Additional Feature :
- AUTO/SELF REFRESH
- Terminal Position :
- BOTTOM
- RoHS Status :
- ROHS3 Compliant
- Height Seated (Max) :
- 1.025mm
- Nominal Supply Current :
- 55mA
- HTS Code :
- 8542.32.00.02
- Memory Format :
- DRAM
- Factory Lead Time :
- 10 Weeks
- Memory Interface :
- Parallel
- Memory Size :
- 128Mb 4M x 32
- Standby Current-Max :
- 0.00001A
- Supply Voltage-Min (Vsup) :
- 1.7V
- Memory Width :
- 32
- Length :
- 13mm
- Address Bus Width :
- 14b
- Access Time :
- 5ns
- Voltage - Supply :
- 1.7V~1.95V
- Write Cycle Time - Word, Page :
- 15ns
- Operating Mode :
- SYNCHRONOUS
- Number of Ports :
- 1
- Number of Pins :
- 90
- ECCN Code :
- EAR99
- I/O Type :
- COMMON
- Interleaved Burst Length :
- 24816
- Output Characteristics :
- 3-STATE
- Number of Functions :
- 1
- Supply Voltage :
- 1.8V
- Datasheets
- W947D2HBJX5I

Memory Winbond Electronics Corporation W947D2HBJX5I Overview
The Winbond Electronics Corporation W947D2HBJX5I offers a strategic blend of capacity, performance, and compact form factor as a 128Mbit parallel DRAM integrated circuit. Designed with cutting-edge technology, this high-density IC embodies the company's commitment to providing state-of-the-art memory solutions. The W947D2HBJX5I is engineered to operate at a power supply voltage of 1.8V, striking an optimum balance between energy efficiency and reliable data throughput. Enclosed in a space-saving 90-ball VFBGA package, it ensures a minimized footprint on system boards, making it an excellent choice for applications with stringent space requirements. The Memory Winbond Electronics Corporation W947D2HBJX5I is crafted for B2B clients seeking bulk purchases of dependable and high-performance memory components for their sophisticated electronic systems.
W947D2HBJX5I Features
- 128Mbit storage capacity offering ample data management space
- Parallel interface enabling robust and efficient communication with microcontrollers and processors
- Encased in a 90-ball Very Fine Ball Grid Array (VFBGA) for reduced space consumption
- Low voltage operation at 1.8V enhancing power management for portable and embedded applications
- High-speed data processing capabilities ideal for performance-intensive operations
W947D2HBJX5I Applications
- Consumer Electronics: In devices such as digital cameras, the W947D2HBJX5I can handle complex image processing tasks and buffer large quantities of image data.
- Communications: Used in routers and switches to manage data flow and buffer incoming and outgoing packets efficiently.
- Automotive: Suitable for infotainment systems where quick data retrieval and storage are essential for a responsive user interface.
- Industrial Automation: In control units, this DRAM could be deployed to manage real-time data processing and machine instructions.
- Portable Devices: Due to its low power consumption, it's well-suited for battery-powered devices needing large memory with minimal energy drain.
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