VT6T1T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Vce Saturation (Max) @ Ib, Ic :

300mV @ 10mA, 100mA

Qualification Status :

Not Qualified

Transition Frequency :

350MHz

Transistor Type :

2 PNP (Dual)

Pbfree Code :

yes

Current - Collector Cutoff (Max) :

100nA ICBO

JESD-609 Code :

e2

Pin Count :

6

Frequency - Transition :

350MHz

Terminal Finish :

TIN COPPER

Polarity/Channel Type :

PNP

Surface Mount :

yes

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Power Dissipation-Max (Abs) :

0.15W

Factory Lead Time :

13 Weeks

Package / Case :

6-SMD, Flat Leads

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Number of Terminations :

6

JESD-30 Code :

R-PDSO-F6

Configuration :

SEPARATE, 2 ELEMENTS

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Voltage - Collector Emitter Breakdown (Max) :

20V

Power - Max :

150mW

Time@Peak Reflow Temperature-Max (s) :

10

Mounting Type :

Surface Mount

Current - Collector (Ic) (Max) :

200mA

Number of Elements :

2

Transistor Element Material :

SILICON

Operating Temperature :

150°C TJ