VT6T1T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

JESD-609 Code :

e2

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Number of Elements :

2

Frequency - Transition :

350MHz

Terminal Finish :

TIN COPPER

Pbfree Code :

yes

Transistor Element Material :

SILICON

Power - Max :

150mW

Lead Free :

Lead Free

Transition Frequency :

350MHz

Power Dissipation-Max (Abs) :

0.15W

Operating Temperature :

150°C TJ

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SEPARATE, 2 ELEMENTS

Package / Case :

6-SMD, Flat Leads

Pin Count :

6

Time@Peak Reflow Temperature-Max (s) :

10

Surface Mount :

yes

Transistor Type :

2 PNP (Dual)

Current - Collector Cutoff (Max) :

100nA ICBO

Voltage - Collector Emitter Breakdown (Max) :

20V

Current - Collector (Ic) (Max) :

200mA

JESD-30 Code :

R-PDSO-F6

Polarity/Channel Type :

PNP

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

13 Weeks

Vce Saturation (Max) @ Ib, Ic :

300mV @ 10mA, 100mA

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

6