VT6T11T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Transition Frequency :

350MHz

Transistor Type :

2 PNP (Dual)

Qualification Status :

Not Qualified

Number of Terminations :

6

Configuration :

Current Mirror

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 2V

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Vce Saturation (Max) @ Ib, Ic :

300mV @ 10mA, 100mA

JESD-609 Code :

e2

Current - Collector Cutoff (Max) :

100nA ICBO

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

10

Factory Lead Time :

13 Weeks

Current - Collector (Ic) (Max) :

200mA

Surface Mount :

yes

Pbfree Code :

yes

Voltage - Collector Emitter Breakdown (Max) :

20V

Operating Temperature :

150°C TJ

Mounting Type :

Surface Mount

Package / Case :

6-SMD, Flat Leads

Power - Max :

150mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Polarity/Channel Type :

PNP

Lead Free :

Lead Free

Pin Count :

6

Terminal Finish :

TIN COPPER

Frequency - Transition :

350MHz

Power Dissipation-Max (Abs) :

0.15W

JESD-30 Code :

R-PDSO-F6