VT6T11T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Factory Lead Time :

13 Weeks

Configuration :

Current Mirror

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e2

Terminal Finish :

TIN COPPER

Time@Peak Reflow Temperature-Max (s) :

10

Power Dissipation-Max (Abs) :

0.15W

Number of Terminations :

6

Lead Free :

Lead Free

JESD-30 Code :

R-PDSO-F6

Frequency - Transition :

350MHz

Transistor Type :

2 PNP (Dual)

Number of Elements :

1

Pin Count :

6

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Current - Collector Cutoff (Max) :

100nA ICBO

Vce Saturation (Max) @ Ib, Ic :

300mV @ 10mA, 100mA

Transistor Element Material :

SILICON

Operating Temperature :

150°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 2V

RoHS Status :

ROHS3 Compliant

Qualification Status :

Not Qualified

Voltage - Collector Emitter Breakdown (Max) :

20V

Power - Max :

150mW

Transition Frequency :

350MHz

Polarity/Channel Type :

PNP

Current - Collector (Ic) (Max) :

200mA

Surface Mount :

yes

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

6-SMD, Flat Leads