VT6T11T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Surface Mount :

yes

Number of Elements :

1

JESD-30 Code :

R-PDSO-F6

Power - Max :

150mW

Factory Lead Time :

13 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 2V

Mounting Type :

Surface Mount

Package / Case :

6-SMD, Flat Leads

Current - Collector (Ic) (Max) :

200mA

Current - Collector Cutoff (Max) :

100nA ICBO

Vce Saturation (Max) @ Ib, Ic :

300mV @ 10mA, 100mA

Configuration :

Current Mirror

Peak Reflow Temperature (Cel) :

260

Polarity/Channel Type :

PNP

JESD-609 Code :

e2

Time@Peak Reflow Temperature-Max (s) :

10

Transistor Type :

2 PNP (Dual)

Pbfree Code :

yes

Power Dissipation-Max (Abs) :

0.15W

Number of Terminations :

6

Voltage - Collector Emitter Breakdown (Max) :

20V

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Operating Temperature :

150°C TJ

Pin Count :

6

Qualification Status :

Not Qualified

Transition Frequency :

350MHz

Terminal Finish :

TIN COPPER

RoHS Status :

ROHS3 Compliant

Frequency - Transition :

350MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)