VS-GB200TH120N
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- Mfr.Part #
- VS-GB200TH120N
- Manufacturer
- Vishay
- Package / Case
- Double INT-A-PAK (3 + 4)
- Datasheet
- Download
- Description
- IGBT MOD 1200V 360A INT-A-PAK
- Stock
- 14,248
- In Stock ：
- 14,248
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - IGBTs - Modules
- Configuration :
- Half Bridge
- Operating Temperature :
- 150°C TJ
- Input Capacitance (Cies) @ Vce :
- 14.9nF @ 25V
- Terminal Finish :
- Nickel (Ni)
- Number of Elements :
- 1
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Max Power Dissipation :
- 1.136kW
- Current - Collector Cutoff (Max) :
- 5mA
- Input Capacitance :
- 14.9nF
- Input :
- Standard
- Mounting Type :
- Chassis Mount
- Max Collector Current :
- 360A
- RoHS Status :
- ROHS3 Compliant
- Gate-Emitter Voltage-Max :
- 20V
- Vce(on) (Max) @ Vge, Ic :
- 2.35V @ 15V, 200A
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Power - Max :
- 1136W
- Factory Lead Time :
- 14 Weeks
- Mount :
- Chassis Mount
- NTC Thermistor :
- No
- Package / Case :
- Double INT-A-PAK (3 + 4)
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Published :
- 2015
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 2.35V
- Datasheets
- VS-GB200TH120N
VS-GB200TH120N datasheet pdf and Transistors - IGBTs - Modules product details from Vishay Semiconductor Diodes Division stock available at
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