UMX1NTN

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Max Frequency :

100MHz

Published :

2003

Type :

GENERAL PURPOSE

Element Configuration :

Dual

Time@Peak Reflow Temperature-Max (s) :

10

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA

Transistor Application :

AMPLIFIER

Mount :

Surface Mount

Mounting Type :

Surface Mount

hFE Min :

120

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

13 Weeks

Current Rating :

150mA

Max Power Dissipation :

150mW

Collector Base Voltage (VCBO) :

60V

Collector Emitter Voltage (VCEO) :

50V

Length :

2mm

Height :

900μm

Terminal Finish :

Tin/Copper (Sn/Cu)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

150°C TJ

Max Breakdown Voltage :

50V

Collector Emitter Saturation Voltage :

400mV

Number of Elements :

2

JESD-609 Code :

e2

Current - Collector Cutoff (Max) :

100nA ICBO

Width :

1.25mm

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Number of Pins :

6

Pbfree Code :

yes

Pin Count :

6

Collector Emitter Breakdown Voltage :

50V

Max Collector Current :

150mA

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Voltage - Rated DC :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

VCEsat-Max :

0.4 V

Polarity :

NPN

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

150mW

Emitter Base Voltage (VEBO) :

7V

Transistor Type :

2 NPN (Dual)

HTS Code :

8541.21.00.75

Continuous Collector Current :

150mA

Package / Case :

6-TSSOP, SC-88, SOT-363

Transition Frequency :

180MHz

Gain Bandwidth Product :

180MHz

Base Part Number :

*MX1

Number of Terminations :

6