UMX1N

Manufacturer :

YANGJIE

Product Category :

Transistors - Bipolar (BJT) - Arrays

Lead Free :

Lead Free

Max Power Dissipation :

150mW

Max Collector Current :

150mA

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Package / Case :

6-TSSOP, SC-88, SOT-363

Current - Collector Cutoff (Max) :

100nA ICBO

Transistor Application :

AMPLIFIER

Voltage - Rated DC :

50V

RoHS Status :

ROHS3 Compliant

Emitter Base Voltage (VEBO) :

7V

Current Rating :

150mA

REACH SVHC :

No SVHC

Collector Emitter Breakdown Voltage :

50V

Published :

2003

VCEsat-Max :

0.4 V

Power Dissipation :

150mW

Collector Emitter Saturation Voltage :

400mV

Polarity :

NPN

Factory Lead Time :

13 Weeks

Time@Peak Reflow Temperature-Max (s) :

10

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Element Configuration :

Dual

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

hFE Min :

120

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e2

Terminal Finish :

Tin/Copper (Sn/Cu)

Type :

GENERAL PURPOSE

Pbfree Code :

yes

Width :

1.25mm

Continuous Collector Current :

150mA

Transistor Type :

2 NPN (Dual)

Max Breakdown Voltage :

50V

Radiation Hardening :

No

Length :

2mm

Number of Pins :

6

Peak Reflow Temperature (Cel) :

260

Max Frequency :

100MHz

Transition Frequency :

180MHz

Gain Bandwidth Product :

180MHz

ECCN Code :

EAR99

Operating Temperature :

150°C TJ

Number of Elements :

2

HTS Code :

8541.21.00.75

Pin Count :

6

Height :

900μm

Base Part Number :

*MX1

Collector Base Voltage (VCBO) :

60V

Number of Terminations :

6

Collector Emitter Voltage (VCEO) :

50V