UMX1N

Manufacturer :

YANGJIE

Product Category :

Transistors - Bipolar (BJT) - Arrays

Terminal Form :

Gull wing

Published :

2003

Transistor Application :

AMPLIFIER

Number of Elements :

2

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA

RoHS Status :

ROHS3 Compliant

Package / Case :

6-TSSOP, SC-88, SOT-363

Continuous Collector Current :

150mA

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Radiation Hardening :

No

Transistor Type :

2 NPN (Dual)

Factory Lead Time :

13 Weeks

Collector Emitter Saturation Voltage :

400mV

Collector Base Voltage (VCBO) :

60V

Max Frequency :

100MHz

Max Breakdown Voltage :

50V

REACH SVHC :

No SVHC

Type :

GENERAL PURPOSE

Width :

1.25mm

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Transition Frequency :

180MHz

Peak Reflow Temperature (Cel) :

260

Polarity :

NPN

Element Configuration :

Dual

Current - Collector Cutoff (Max) :

100nA ICBO

Terminal Finish :

Tin/Copper (Sn/Cu)

Transistor Element Material :

SILICON

HTS Code :

8541.21.00.75

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Number of Terminations :

6

hFE Min :

120

Number of Pins :

6

Collector Emitter Voltage (VCEO) :

50V

Height :

900μm

Current Rating :

150mA

Emitter Base Voltage (VEBO) :

7V

Pbfree Code :

yes

JESD-609 Code :

e2

Power Dissipation :

150mW

Max Collector Current :

150mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

50V

Operating Temperature :

150°C TJ

Max Power Dissipation :

150mW

Length :

2mm

Time@Peak Reflow Temperature-Max (s) :

10

VCEsat-Max :

0.4 V

ECCN Code :

EAR99

Voltage - Rated DC :

50V

Pin Count :

6

Base Part Number :

*MX1

Gain Bandwidth Product :

180MHz