UMX1N

Manufacturer :

YANGJIE

Product Category :

Transistors - Bipolar (BJT) - Arrays

ECCN Code :

EAR99

Operating Temperature :

150°C TJ

Number of Elements :

2

Pin Count :

6

Height :

900μm

Max Breakdown Voltage :

50V

Number of Pins :

6

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e2

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

13 Weeks

Continuous Collector Current :

150mA

Type :

GENERAL PURPOSE

Collector Base Voltage (VCBO) :

60V

Current - Collector Cutoff (Max) :

100nA ICBO

Time@Peak Reflow Temperature-Max (s) :

10

Element Configuration :

Dual

Transistor Application :

AMPLIFIER

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

hFE Min :

120

RoHS Status :

ROHS3 Compliant

Transistor Type :

2 NPN (Dual)

Max Collector Current :

150mA

Current Rating :

150mA

Power Dissipation :

150mW

Polarity :

NPN

Package / Case :

6-TSSOP, SC-88, SOT-363

Emitter Base Voltage (VEBO) :

7V

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

VCEsat-Max :

0.4 V

Lead Free :

Lead Free

Pbfree Code :

yes

Base Part Number :

*MX1

Published :

2003

Transition Frequency :

180MHz

Radiation Hardening :

No

Max Frequency :

100MHz

Number of Terminations :

6

Max Power Dissipation :

150mW

Collector Emitter Voltage (VCEO) :

50V

HTS Code :

8541.21.00.75

Collector Emitter Breakdown Voltage :

50V

Length :

2mm

Mount :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA

Width :

1.25mm

REACH SVHC :

No SVHC

Voltage - Rated DC :

50V

Gain Bandwidth Product :

180MHz

Terminal Finish :

Tin/Copper (Sn/Cu)

Transistor Element Material :

SILICON

Collector Emitter Saturation Voltage :

400mV