UMG1NTR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Number of Pins :

5

Current Rating :

30mA

Packaging :

Tape and Reel (TR)

Height :

900μm

Configuration :

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

Pbfree Code :

yes

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e2

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

56 @ 5mA 5V

Length :

2.1mm

Resistor - Emitter Base (R2) :

22k Ω

Terminal Form :

Gull wing

Base Part Number :

*MG1

Radiation Hardening :

No

Emitter Base Voltage (VEBO) :

5V

Factory Lead Time :

13 Weeks

Polarity :

NPN

Time@Peak Reflow Temperature-Max (s) :

10

Max Power Dissipation :

300mW

Mounting Type :

Surface Mount

VCEsat-Max :

0.3 V

Number of Elements :

2

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 1

Terminal Finish :

TIN COPPER

Resistor - Base (R1) :

22k Ω

Current - Collector Cutoff (Max) :

500nA

Transistor Type :

2 NPN - Pre-Biased (Dual)

ECCN Code :

EAR99

Number of Terminations :

5

Collector Emitter Voltage (VCEO) :

300mV

Max Breakdown Voltage :

50V

Max Collector Current :

100mA

Min Operating Temperature :

-55°C

Frequency - Transition :

250MHz

Pin Count :

5

Collector Emitter Breakdown Voltage :

50V

Peak Reflow Temperature (Cel) :

260

hFE Min :

56

Voltage - Rated DC :

50V

Width :

1.35mm

Package / Case :

5-TSSOP, SC-70-5, SOT-353

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Operating Temperature :

150°C

Mount :

Surface Mount

Published :

2011

Transistor Application :

SWITCHING