UMD4NTR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

DC Current Gain (hFE) (Min) @ Ic, Vce :

68 @ 5mA 5V

Mounting Type :

Surface Mount

Operating Supply Voltage :

50V

Resistor - Base (R1) :

4.7k Ω, 10k Ω

Current - Collector Cutoff (Max) :

500nA

Min Operating Temperature :

-55°C

Collector Emitter Breakdown Voltage :

50V

Pin Count :

6

Base Part Number :

*MD4

Package / Case :

6-TSSOP, SC-88, SOT-363

Max Power Dissipation :

120mW

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Radiation Hardening :

No

Resistor - Emitter Base (R2) :

47k Ω

Time@Peak Reflow Temperature-Max (s) :

10

Transistor Application :

SWITCHING

Max Output Current :

100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Terminal Finish :

TIN COPPER

Collector Emitter Voltage (VCEO) :

300mV

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA / 300mV @ 250μA, 5mA

Lead Free :

Lead Free

Transition Frequency :

250MHz

Frequency - Transition :

250MHz

Mount :

Surface Mount

Element Configuration :

Dual

Factory Lead Time :

10 Weeks

Pbfree Code :

yes

Polarity :

NPN, PNP

Published :

2004

Number of Terminations :

6

Power - Max :

150mW 120mW

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Max Operating Temperature :

150°C

Max Collector Current :

100mA

Max Breakdown Voltage :

50V

hFE Min :

68

Terminal Form :

Gull wing

ECCN Code :

EAR99

JESD-609 Code :

e2

Number of Elements :

2

Number of Pins :

6