UMD4NTR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Max Output Current :

100mA

Published :

2004

Current - Collector Cutoff (Max) :

500nA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

10 Weeks

Terminal Finish :

TIN COPPER

Max Power Dissipation :

120mW

Max Breakdown Voltage :

50V

hFE Min :

68

Max Operating Temperature :

150°C

Resistor - Emitter Base (R2) :

47k Ω

Mounting Type :

Surface Mount

Base Part Number :

*MD4

Power - Max :

150mW 120mW

Max Collector Current :

100mA

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

10

Package / Case :

6-TSSOP, SC-88, SOT-363

Lead Free :

Lead Free

Min Operating Temperature :

-55°C

Operating Supply Voltage :

50V

Collector Emitter Breakdown Voltage :

50V

ECCN Code :

EAR99

Transition Frequency :

250MHz

Number of Elements :

2

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Number of Pins :

6

Transistor Application :

SWITCHING

Resistor - Base (R1) :

4.7k Ω, 10k Ω

Polarity :

NPN, PNP

Pin Count :

6

Packaging :

Tape and Reel (TR)

DC Current Gain (hFE) (Min) @ Ic, Vce :

68 @ 5mA 5V

Element Configuration :

Dual

Number of Terminations :

6

Pbfree Code :

yes

JESD-609 Code :

e2

Mount :

Surface Mount

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Collector Emitter Voltage (VCEO) :

300mV

Frequency - Transition :

250MHz

Terminal Form :

Gull wing

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA / 300mV @ 250μA, 5mA