UMC2NT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Max Power Dissipation :

150mW

Resistor - Base (R1) :

22k Ω

Collector Base Voltage (VCBO) :

50V

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

hFE Min :

60

RoHS Status :

RoHS Compliant

Current - Collector Cutoff (Max) :

500nA

Configuration :

COMMON BASE, 2 ELEMENTS WITH BUILT-IN RESISTOR

JESD-609 Code :

e3

Number of Pins :

5

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Number of Terminations :

5

Pin Count :

5

Resistor - Emitter Base (R2) :

22k Ω

Polarity :

PNP

Min Operating Temperature :

-65°C

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Terminal Finish :

Tin (Sn)

Mounting Type :

Surface Mount

Radiation Hardening :

No

Voltage - Rated DC :

50V

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Max Operating Temperature :

150°C

Collector Emitter Breakdown Voltage :

50V

Transistor Application :

SWITCHING

Published :

2010

Continuous Collector Current :

100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

150mW

Number of Elements :

2

Max Collector Current :

100mA

Package / Case :

5-TSSOP, SC-70-5, SOT-353

Lead Free :

Lead Free

Pbfree Code :

yes

Current Rating :

100mA

Collector Emitter Voltage (VCEO) :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 10V