UMB8NTR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

VCEsat-Max :

0.3 V

hFE Min :

100

Vce Saturation (Max) @ Ib, Ic :

300mV @ 1mA, 10mA

Operating Supply Voltage :

50V

Radiation Hardening :

No

Transistor Type :

2 PNP - Pre-Biased (Dual)

Terminal Form :

Gull wing

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA 5V

Frequency - Transition :

250MHz

Number of Pins :

6

Max Collector Current :

100mA

Additional Feature :

Digital

Pin Count :

6

Time@Peak Reflow Temperature-Max (s) :

10

Min Operating Temperature :

-55°C

Number of Elements :

2

Max Output Current :

100mA

Resistor - Base (R1) :

10k Ω

Number of Terminations :

6

Collector Emitter Voltage (VCEO) :

50V

Transition Frequency :

250MHz

Published :

2001

HTS Code :

8541.21.00.75

Transistor Application :

SWITCHING

Max Power Dissipation :

150mW

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e2

Current Rating :

-100mA

Polarity :

PNP

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Factory Lead Time :

10 Weeks

Element Configuration :

Dual

Mount :

Surface Mount

Max Operating Temperature :

150°C

Voltage - Rated DC :

-50V

Collector Emitter Breakdown Voltage :

50V

Terminal Finish :

Tin/Copper (Sn/Cu)

Package / Case :

6-TSSOP, SC-88, SOT-363

Mounting Type :

Surface Mount

Base Part Number :

MB8