UMA1NTR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Current - Collector Cutoff (Max) :

500nA

Max Breakdown Voltage :

50V

Power Dissipation :

150mW

Configuration :

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

Max Collector Current :

100mA

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Resistor - Base (R1) :

22k Ω

Max Power Dissipation :

150mW

ECCN Code :

EAR99

hFE Min :

56

Resistor - Emitter Base (R2) :

22k Ω

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Collector Emitter Breakdown Voltage :

50V

Package / Case :

5-TSSOP, SC-70-5, SOT-353

Terminal Form :

Gull wing

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Max Operating Temperature :

150°C

Min Operating Temperature :

-55°C

Terminal Finish :

Tin/Copper (Sn/Cu)

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

5

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

10

RoHS Status :

ROHS3 Compliant

Transistor Type :

2 PNP - Pre-Biased (Dual)

Frequency - Transition :

250MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

56 @ 5mA 5V

Peak Reflow Temperature (Cel) :

260

Voltage - Rated DC :

-50V

Transition Frequency :

250MHz

VCEsat-Max :

0.3 V

Radiation Hardening :

No

Polarity :

PNP

Number of Elements :

2

Pbfree Code :

yes

Collector Emitter Voltage (VCEO) :

300mV

Transistor Application :

AMPLIFIER

Current Rating :

-100mA

Base Part Number :

MA1

Number of Terminations :

5

Factory Lead Time :

13 Weeks

Pin Count :

5

Continuous Collector Current :

-100mA

Published :

2012

JESD-609 Code :

e2