TSM4NC50CP ROG

Manufacturer :

Taiwan Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

500V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

16A

Factory Lead Time :

20 Weeks

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

78.4 mJ

Vgs(th) (Max) @ Id :

3V @ 250µA

Drain Current-Max (Abs) (ID) :

4A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

453pF @ 50V

Power Dissipation-Max :

83W Tc

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

2.7 Ω @ 1.7A, 10V

Number of Terminations :

2

Packaging :

Digi-Reel®

Drain to Source Voltage (Vdss) :

500V

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Surface Mount :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

4A Tc