TSM4946DCS RLG

Manufacturer :

Taiwan Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Input Capacitance (Ciss) (Max) @ Vds :

910pF @ 24V

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Published :

2010

Transistor Element Material :

SILICON

Packaging :

Digi-Reel®

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

4.5A Ta

Time@Peak Reflow Temperature-Max (s) :

30

Additional Feature :

ULTRA-LOW RESISTANCE

Drain to Source Voltage (Vdss) :

60V

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain Current-Max (Abs) (ID) :

4.5A

DS Breakdown Voltage-Min :

60V

Rds On (Max) @ Id, Vgs :

55m Ω @ 4.5A, 10V

Number of Elements :

2

Transistor Application :

SWITCHING

Number of Terminations :

8

FET Type :

2 N-Channel (Dual)

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Vgs(th) (Max) @ Id :

3V @ 250µA

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

30A

Peak Reflow Temperature (Cel) :

260

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.055Ohm

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PDSO-G8

FET Feature :

Standard

Factory Lead Time :

20 Weeks

HTS Code :

8541.29.00.95

Mounting Type :

Surface Mount

Power - Max :

2.4W

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE