TSM4806CS RLG

Manufacturer :

Taiwan Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

12.3nC @ 4.5V

Number of Elements :

1

DS Breakdown Voltage-Min :

20V

Current - Continuous Drain (Id) @ 25°C :

28A Ta

JESD-30 Code :

R-PDSO-G8

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

20V

Operating Mode :

ENHANCEMENT MODE

HTS Code :

8541.29.00.95

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.02Ohm

Vgs (Max) :

±8V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Factory Lead Time :

20 Weeks

Transistor Element Material :

SILICON

Power Dissipation-Max :

2W Ta

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

70A

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

28A

Terminal Position :

Dual

Packaging :

Digi-Reel®

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

FET Type :

N-Channel

Number of Terminations :

8

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

20m Ω @ 20A, 4.5V

Terminal Form :

Gull wing

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

961pF @ 15V

Vgs(th) (Max) @ Id :

1V @ 250μA