TSM4NB60CP ROG

Manufacturer :

Taiwan Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

500pF @ 25V

Vgs (Max) :

±30V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

2.5 Ω @ 2A, 10V

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

14.5nC @ 10V

DS Breakdown Voltage-Min :

600V

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

600V

Pulsed Drain Current-Max (IDM) :

16A

Published :

2016

FET Type :

N-Channel

Factory Lead Time :

20 Weeks

Qualification Status :

Not Qualified

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

50W Tc

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

4A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

100 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Digi-Reel®