TSM4N80CZ C0G
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- Mfr.Part #
- TSM4N80CZ C0G
- Manufacturer
- Taiwan Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CHANNEL 800V 4A TO220
- Stock
- 33,992
- In Stock ：
- 33,992
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- Manufacturer :
- Taiwan Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 24 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 38.7W Tc
- Supplier Device Package :
- TO-220
- Package / Case :
- TO-220-3
- Packaging :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 10V
- Vgs (Max) :
- ±30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Drain to Source Voltage (Vdss) :
- 800V
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 955pF @ 25V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 4A Tc
- Rds On (Max) @ Id, Vgs :
- 3Ohm @ 1.2A, 10V
- Datasheets
- TSM4N80CZ C0G
N-Channel Tube 3Ohm @ 1.2A, 10V ±30V 955pF @ 25V 20nC @ 10V 800V TO-220-3
TSM4N80CZ C0G Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 955pF @ 25V.In order to operate this transistor, a voltage of 800V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
TSM4N80CZ C0G Features
a 800V drain to source voltage (Vdss)
TSM4N80CZ C0G Applications
There are a lot of Taiwan Semiconductor Corporation
TSM4N80CZ C0G applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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