TP5335K1-G
- Mfr.Part #
- TP5335K1-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET P-CH 350V 85MA TO236AB
- Stock
- 3,794
- In Stock :
- 3,794
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Brand :
- Microchip Technology / Atmel
- Published :
- 2013
- Transistor Polarity :
- P-Channel
- Product Category :
- MOSFET
- FET Type :
- P-Channel
- Product Type :
- MOSFET
- Power Dissipation-Max :
- 360mW Ta
- Manufacturer :
- Microchip
- Additional Feature :
- LOW THRESHOLD
- Current - Continuous Drain (Id) @ 25°C :
- 85mA Tj
- Configuration :
- Single
- Mounting Style :
- SMD/SMT
- Channel Mode :
- Enhancement
- Product Status :
- Active
- Type :
- FET
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Vgs (Max) :
- ±20V
- Power Dissipation (Max) :
- 360mW (Ta)
- Number of Terminations :
- 3
- Packaging :
- Tape and Reel (TR)
- Fall Time (Typ) :
- 15 ns
- Power Dissipation :
- 360mW
- Feedback Cap-Max (Crss) :
- 22 pF
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Type :
- 1 P-Channel
- Series :
- -
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 30 Ω @ 200mA, 10V
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Mount :
- Surface Mount
- Max Junction Temperature (Tj) :
- 150°C
- Terminal Position :
- Dual
- Minimum Operating Temperature :
- - 55 C
- FET Feature :
- -
- RoHS :
- Details
- Transistor Element Material :
- SILICON
- Height :
- 1.12mm
- Turn-Off Delay Time :
- 25 ns
- Supplier Device Package :
- TO-236AB (SOT23)
- Drain Current-Max (Abs) (ID) :
- 0.085A
- Qualification Status :
- Not Qualified
- Element Configuration :
- Single
- Number of Channels :
- 1
- Operating Temperature :
- -55°C~150°C
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Drain to Source Breakdown Voltage :
- -350V
- Rise Time :
- 15ns
- Turn On Delay Time :
- 20 ns
- Weight :
- 1.437803g
- Continuous Drain Current Id :
- 85
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 350V
- Input Capacitance (Ciss) (Max) @ Vds :
- 110pF @ 25V
- Channel Type :
- P
- Product :
- MOSFET Small Signal
- Maximum Operating Temperature :
- + 150 C
- Continuous Drain Current (ID) :
- -85mA
- Factory Lead Time :
- 20 Weeks
- Base Product Number :
- TP5335
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Vgs(th) (Max) @ Id :
- 2.4V @ 1mA
- Datasheets
- TP5335K1-G

P-Channel Tape & Reel (TR) 30 Ω @ 200mA, 10V ±20V 110pF @ 25V 350V TO-236-3, SC-59, SOT-23-3
TP5335K1-G Overview
A device's maximum input capacitance is 110pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is -85mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-350V, and this device has a drain-to-source breakdown voltage of -350V voltage.Its drain current is 0.085A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 25 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 20 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 350V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
TP5335K1-G Features
a continuous drain current (ID) of -85mA
a drain-to-source breakdown voltage of -350V voltage
the turn-off delay time is 25 ns
a 350V drain to source voltage (Vdss)
TP5335K1-G Applications
There are a lot of Microchip Technology
TP5335K1-G applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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