TP5335K1-G

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Mfr.Part #
TP5335K1-G
Manufacturer
Microchip Technology
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
MOSFET P-CH 350V 85MA TO236AB
Stock
3,794
In Stock :
3,794

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs(th) (Max) @ Id :
2.4V @ 1mA
Element Configuration :
Single
Product Category :
MOSFET
Published :
2013
Packaging :
Tape and Reel (TR)
Gate to Source Voltage (Vgs) :
20V
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Factory Lead Time :
20 Weeks
Turn On Delay Time :
20 ns
Peak Reflow Temperature (Cel) :
260
Rds On (Max) @ Id, Vgs :
30 Ω @ 200mA, 10V
Time@Peak Reflow Temperature-Max (s) :
40
Series :
-
Additional Feature :
LOW THRESHOLD
Transistor Application :
SWITCHING
Configuration :
Single
Continuous Drain Current (ID) :
-85mA
Transistor Element Material :
SILICON
Terminal Finish :
Matte Tin (Sn) - annealed
Feedback Cap-Max (Crss) :
22 pF
FET Type :
P-Channel
Type :
FET
Terminal Position :
Dual
Channel Type :
P
Package / Case :
TO-236-3, SC-59, SOT-23-3
Product Status :
Active
Qualification Status :
Not Qualified
Number of Pins :
3
Brand :
Microchip Technology / Atmel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
3
Mounting Style :
SMD/SMT
Turn-Off Delay Time :
25 ns
Power Dissipation :
360mW
Drain Current-Max (Abs) (ID) :
0.085A
JESD-609 Code :
e3
Continuous Drain Current Id :
85
Mounting Type :
Surface Mount
Product :
MOSFET Small Signal
Vgs (Max) :
±20V
FET Feature :
-
Terminal Form :
Gull wing
Transistor Type :
1 P-Channel
RoHS Status :
ROHS3 Compliant
Minimum Operating Temperature :
- 55 C
Supplier Device Package :
TO-236AB (SOT23)
Rise Time :
15ns
Weight :
1.437803g
Number of Channels :
1
Power Dissipation-Max :
360mW Ta
Maximum Operating Temperature :
+ 150 C
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Drain to Source Voltage (Vdss) :
350V
Input Capacitance (Ciss) (Max) @ Vds :
110pF @ 25V
Drain to Source Breakdown Voltage :
-350V
Operating Mode :
ENHANCEMENT MODE
Product Type :
MOSFET
Transistor Polarity :
P-Channel
Number of Elements :
1
Current - Continuous Drain (Id) @ 25°C :
85mA Tj
Fall Time (Typ) :
15 ns
Height :
1.12mm
Power Dissipation (Max) :
360mW (Ta)
Base Product Number :
TP5335
ECCN Code :
EAR99
Mount :
Surface Mount
RoHS :
Details
Operating Temperature :
-55°C~150°C
Max Junction Temperature (Tj) :
150°C
Channel Mode :
Enhancement
Manufacturer :
Microchip
Datasheets
TP5335K1-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TP5335K1-G from Chip IC,where excellence meets affordability. This product stands out with its Type:FET, Package / Case:TO-236-3, SC-59, SOT-23-3, Number of Pins:3, Number of Terminations:3, Mounting Type:Surface Mount, Number of Channels:1, Operating Temperature:-55°C~150°C, TP5335K1-G pinout, TP5335K1-G datasheet PDF, TP5335K1-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TP5335K1-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TP5335K1-G


P-Channel Tape & Reel (TR) 30 Ω @ 200mA, 10V ±20V 110pF @ 25V 350V TO-236-3, SC-59, SOT-23-3

TP5335K1-G Overview


A device's maximum input capacitance is 110pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is -85mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-350V, and this device has a drain-to-source breakdown voltage of -350V voltage.Its drain current is 0.085A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 25 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 20 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 350V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.

TP5335K1-G Features


a continuous drain current (ID) of -85mA
a drain-to-source breakdown voltage of -350V voltage
the turn-off delay time is 25 ns
a 350V drain to source voltage (Vdss)


TP5335K1-G Applications


There are a lot of Microchip Technology
TP5335K1-G applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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