TP5335K1-G

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Mfr.Part #
TP5335K1-G
Manufacturer
Microchip Technology
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
MOSFET P-CH 350V 85MA TO236AB
Stock
3,794
In Stock :
3,794

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Application :
SWITCHING
Brand :
Microchip Technology / Atmel
Published :
2013
Transistor Polarity :
P-Channel
Product Category :
MOSFET
FET Type :
P-Channel
Product Type :
MOSFET
Power Dissipation-Max :
360mW Ta
Manufacturer :
Microchip
Additional Feature :
LOW THRESHOLD
Current - Continuous Drain (Id) @ 25°C :
85mA Tj
Configuration :
Single
Mounting Style :
SMD/SMT
Channel Mode :
Enhancement
Product Status :
Active
Type :
FET
RoHS Status :
ROHS3 Compliant
Time@Peak Reflow Temperature-Max (s) :
40
Mounting Type :
Surface Mount
Terminal Form :
Gull wing
Vgs (Max) :
±20V
Power Dissipation (Max) :
360mW (Ta)
Number of Terminations :
3
Packaging :
Tape and Reel (TR)
Fall Time (Typ) :
15 ns
Power Dissipation :
360mW
Feedback Cap-Max (Crss) :
22 pF
Gate to Source Voltage (Vgs) :
20V
Transistor Type :
1 P-Channel
Series :
-
Package / Case :
TO-236-3, SC-59, SOT-23-3
JESD-609 Code :
e3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rds On (Max) @ Id, Vgs :
30 Ω @ 200mA, 10V
Terminal Finish :
Matte Tin (Sn) - annealed
Mount :
Surface Mount
Max Junction Temperature (Tj) :
150°C
Terminal Position :
Dual
Minimum Operating Temperature :
- 55 C
FET Feature :
-
RoHS :
Details
Transistor Element Material :
SILICON
Height :
1.12mm
Turn-Off Delay Time :
25 ns
Supplier Device Package :
TO-236AB (SOT23)
Drain Current-Max (Abs) (ID) :
0.085A
Qualification Status :
Not Qualified
Element Configuration :
Single
Number of Channels :
1
Operating Temperature :
-55°C~150°C
Peak Reflow Temperature (Cel) :
260
ECCN Code :
EAR99
Number of Pins :
3
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Drain to Source Breakdown Voltage :
-350V
Rise Time :
15ns
Turn On Delay Time :
20 ns
Weight :
1.437803g
Continuous Drain Current Id :
85
Operating Mode :
ENHANCEMENT MODE
Number of Elements :
1
Drain to Source Voltage (Vdss) :
350V
Input Capacitance (Ciss) (Max) @ Vds :
110pF @ 25V
Channel Type :
P
Product :
MOSFET Small Signal
Maximum Operating Temperature :
+ 150 C
Continuous Drain Current (ID) :
-85mA
Factory Lead Time :
20 Weeks
Base Product Number :
TP5335
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Vgs(th) (Max) @ Id :
2.4V @ 1mA
Datasheets
TP5335K1-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TP5335K1-G from Chip IC,where excellence meets affordability. This product stands out with its Type:FET, Mounting Type:Surface Mount, Number of Terminations:3, Package / Case:TO-236-3, SC-59, SOT-23-3, Number of Channels:1, Operating Temperature:-55°C~150°C, Number of Pins:3, TP5335K1-G pinout, TP5335K1-G datasheet PDF, TP5335K1-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TP5335K1-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TP5335K1-G


P-Channel Tape & Reel (TR) 30 Ω @ 200mA, 10V ±20V 110pF @ 25V 350V TO-236-3, SC-59, SOT-23-3

TP5335K1-G Overview


A device's maximum input capacitance is 110pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is -85mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-350V, and this device has a drain-to-source breakdown voltage of -350V voltage.Its drain current is 0.085A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 25 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 20 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 350V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.

TP5335K1-G Features


a continuous drain current (ID) of -85mA
a drain-to-source breakdown voltage of -350V voltage
the turn-off delay time is 25 ns
a 350V drain to source voltage (Vdss)


TP5335K1-G Applications


There are a lot of Microchip Technology
TP5335K1-G applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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