TP5335K1-G

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Mfr.Part #
TP5335K1-G
Manufacturer
Microchip Technology
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
MOSFET P-CH 350V 85MA TO236AB
Stock
3,794
In Stock :
3,794

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Packaging :
Tape and Reel (TR)
Published :
2013
Channel Type :
P
Series :
-
RoHS Status :
ROHS3 Compliant
Power Dissipation :
360mW
Product Status :
Active
Mount :
Surface Mount
Mounting Type :
Surface Mount
Fall Time (Typ) :
15 ns
Max Junction Temperature (Tj) :
150°C
Maximum Operating Temperature :
+ 150 C
Channel Mode :
Enhancement
ECCN Code :
EAR99
Package / Case :
TO-236-3, SC-59, SOT-23-3
Type :
FET
Gate to Source Voltage (Vgs) :
20V
Drain to Source Breakdown Voltage :
-350V
Terminal Position :
Dual
Rds On (Max) @ Id, Vgs :
30 Ω @ 200mA, 10V
Element Configuration :
Single
FET Type :
P-Channel
Additional Feature :
LOW THRESHOLD
Configuration :
Single
Operating Mode :
ENHANCEMENT MODE
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
RoHS :
Details
Operating Temperature :
-55°C~150°C
Height :
1.12mm
Product Type :
MOSFET
Peak Reflow Temperature (Cel) :
260
Transistor Element Material :
SILICON
Minimum Operating Temperature :
- 55 C
Terminal Finish :
Matte Tin (Sn) - annealed
Mounting Style :
SMD/SMT
Current - Continuous Drain (Id) @ 25°C :
85mA Tj
Feedback Cap-Max (Crss) :
22 pF
Vgs(th) (Max) @ Id :
2.4V @ 1mA
FET Feature :
-
Transistor Polarity :
P-Channel
Brand :
Microchip Technology / Atmel
Supplier Device Package :
TO-236AB (SOT23)
Base Product Number :
TP5335
Weight :
1.437803g
Continuous Drain Current (ID) :
-85mA
Vgs (Max) :
±20V
Factory Lead Time :
20 Weeks
Product :
MOSFET Small Signal
Turn-Off Delay Time :
25 ns
Number of Terminations :
3
Terminal Form :
Gull wing
Manufacturer :
Microchip
Drain to Source Voltage (Vdss) :
350V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds :
110pF @ 25V
Time@Peak Reflow Temperature-Max (s) :
40
Power Dissipation (Max) :
360mW (Ta)
Transistor Type :
1 P-Channel
Power Dissipation-Max :
360mW Ta
Rise Time :
15ns
JESD-609 Code :
e3
Number of Channels :
1
Transistor Application :
SWITCHING
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Number of Elements :
1
Product Category :
MOSFET
Qualification Status :
Not Qualified
Number of Pins :
3
Drain Current-Max (Abs) (ID) :
0.085A
Continuous Drain Current Id :
85
Turn On Delay Time :
20 ns
Datasheets
TP5335K1-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TP5335K1-G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:TO-236-3, SC-59, SOT-23-3, Type:FET, Operating Temperature:-55°C~150°C, Number of Terminations:3, Number of Channels:1, Number of Pins:3, TP5335K1-G pinout, TP5335K1-G datasheet PDF, TP5335K1-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TP5335K1-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TP5335K1-G


P-Channel Tape & Reel (TR) 30 Ω @ 200mA, 10V ±20V 110pF @ 25V 350V TO-236-3, SC-59, SOT-23-3

TP5335K1-G Overview


A device's maximum input capacitance is 110pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is -85mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-350V, and this device has a drain-to-source breakdown voltage of -350V voltage.Its drain current is 0.085A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 25 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 20 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 350V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.

TP5335K1-G Features


a continuous drain current (ID) of -85mA
a drain-to-source breakdown voltage of -350V voltage
the turn-off delay time is 25 ns
a 350V drain to source voltage (Vdss)


TP5335K1-G Applications


There are a lot of Microchip Technology
TP5335K1-G applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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