TP5322K1-G
- Mfr.Part #
- TP5322K1-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET P-CH 220V 120MA TO236AB
- Stock
- 2,060
- In Stock :
- 2,060
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 20 ns
- Mounting :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 220V
- Polarity :
- P
- Rds On (Max) @ Id, Vgs :
- 12 Ω @ 200mA, 10V
- Product Status :
- Active
- Operating Temp Range :
- -55C to 150C
- Transistor Type :
- 1 P-Channel
- Gate-Source Voltage (Max) :
- ±20(V)
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Terminal Form :
- Gull wing
- Operating Temperature Classification :
- Military
- Pin Count :
- 3
- Number of Terminations :
- 3
- Qualification Status :
- Not Qualified
- Channel Mode :
- Enhancement
- Width :
- 1.3mm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Turn On Delay Time :
- 10 ns
- Vgs(th) (Max) @ Id :
- 2.4V @ 1mA
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- P-Channel
- Base Product Number :
- TP5322
- Operating Mode :
- ENHANCEMENT MODE
- Weight :
- 1.437803g
- JESD-609 Code :
- e3
- Input Capacitance (Ciss) (Max) @ Vds :
- 110pF @ 25V
- Height :
- 950μm
- Number of Channels :
- 1
- Length :
- 2.9mm
- Power Dissipation (Max) :
- 360mW (Ta)
- Continuous Drain Current :
- 0.12(A)
- Peak Reflow Temperature (Cel) :
- 260
- Series :
- --
- Minimum Operating Temperature :
- - 55 C
- Rad Hardened :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Drain-Source On-Volt :
- 220(V)
- Factory Lead Time :
- 5 Weeks
- Package Type :
- SOT-23
- Transistor Polarity :
- P-Channel
- Product Category :
- MOSFET
- Fall Time (Typ) :
- 15 ns
- ECCN Code :
- EAR99
- Channel Type :
- P
- Mount :
- Surface Mount
- Product :
- MOSFET Small Signal
- Transistor Application :
- SWITCHING
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Power Dissipation :
- 360mW
- Current - Continuous Drain (Id) @ 25°C :
- 120mA Tj
- Number of Elements :
- 1
- Feedback Cap-Max (Crss) :
- 20 pF
- Configuration :
- Single
- FET Feature :
- --
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Brand :
- Microchip Technology / Atmel
- Product Type :
- MOSFET
- Drain to Source Breakdown Voltage :
- -220V
- Number of Pins :
- 3
- Maximum Operating Temperature :
- + 150 C
- Gate to Source Voltage (Vgs) :
- 20V
- RoHS :
- Details
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Mounting Style :
- SMD/SMT
- Published :
- 2013
- Subcategory :
- MOSFETs
- Rise Time :
- 15ns
- Supplier Device Package :
- TO-236AB (SOT23)
- Vgs (Max) :
- ±20V
- Continuous Drain Current Id :
- 120
- Manufacturer :
- Microchip
- Power Dissipation-Max :
- 360mW Ta
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Type :
- Power MOSFET
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Matte Tin (Sn)
- Continuous Drain Current (ID) :
- 120mA
- Datasheets
- TP5322K1-G

P-Channel Tape & Reel (TR) 12 Ω @ 200mA, 10V ±20V 110pF @ 25V 220V TO-236-3, SC-59, SOT-23-3
TP5322K1-G Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 110pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -220V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -220V.As a result of its turn-off delay time, which is 20 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 220V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
TP5322K1-G Features
a continuous drain current (ID) of 120mA
a drain-to-source breakdown voltage of -220V voltage
the turn-off delay time is 20 ns
a 220V drain to source voltage (Vdss)
TP5322K1-G Applications
There are a lot of Microchip Technology
TP5322K1-G applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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