TP5322K1-G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Polarity :

P

Number of Elements :

1

Continuous Drain Current Id :

120

ECCN Code :

EAR99

Weight :

1.437803g

Element Configuration :

Single

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

40

Base Product Number :

TP5322

Vgs(th) (Max) @ Id :

2.4V @ 1mA

Continuous Drain Current :

0.12(A)

JESD-609 Code :

e3

Fall Time (Typ) :

15 ns

Minimum Operating Temperature :

- 55 C

Factory Lead Time :

5 Weeks

Brand :

Microchip Technology / Atmel

Pin Count :

3

Feedback Cap-Max (Crss) :

20 pF

Supplier Device Package :

TO-236AB (SOT23)

Rds On (Max) @ Id, Vgs :

12 Ω @ 200mA, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Product Status :

Active

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

RoHS :

Details

Additional Feature :

LOGIC LEVEL COMPATIBLE

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Operating Temp Range :

-55C to 150C

Package :

Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;

Transistor Application :

SWITCHING

Gate-Source Voltage (Max) :

±20(V)

Number of Pins :

3

Power Dissipation :

360mW

Mount :

Surface Mount

Package / Case :

TO-236-3, SC-59, SOT-23-3

Type :

Power MOSFET

Number of Channels :

1

Qualification Status :

Not Qualified

Channel Mode :

Enhancement

Height :

950μm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Product :

MOSFET Small Signal

Power Dissipation-Max :

360mW Ta

Packaging :

Tape and Reel (TR)

Operating Temperature Classification :

Military

Operating Mode :

ENHANCEMENT MODE

Mounting :

Surface Mount

Number of Terminations :

3

Continuous Drain Current (ID) :

120mA

Length :

2.9mm

Published :

2013

Vgs (Max) :

±20V

Product Type :

MOSFET

Terminal Finish :

Matte Tin (Sn)

Drain-Source On-Volt :

220(V)

Turn On Delay Time :

10 ns

Rad Hardened :

No

Width :

1.3mm

Mounting Style :

SMD/SMT

Transistor Type :

1 P-Channel

Power Dissipation (Max) :

360mW (Ta)

Channel Type :

P

Series :

--

RoHS Status :

ROHS3 Compliant

Package Type :

SOT-23

Drain to Source Breakdown Voltage :

-220V

Input Capacitance (Ciss) (Max) @ Vds :

110pF @ 25V

Manufacturer :

Microchip

Turn-Off Delay Time :

20 ns

Gate to Source Voltage (Vgs) :

20V

Configuration :

Single

Subcategory :

MOSFETs

Maximum Operating Temperature :

+ 150 C

Rise Time :

15ns

FET Type :

P-Channel

Current - Continuous Drain (Id) @ 25°C :

120mA Tj

Product Category :

MOSFET

Drain to Source Voltage (Vdss) :

220V

FET Feature :

--

Transistor Polarity :

P-Channel