TP5322K1-G
- Mfr.Part #
- TP5322K1-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET P-CH 220V 120MA TO236AB
- Stock
- 2,060
- In Stock :
- 2,060
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Series :
- --
- Package Type :
- SOT-23
- Transistor Application :
- SWITCHING
- Continuous Drain Current :
- 0.12(A)
- Vgs (Max) :
- ±20V
- Number of Terminations :
- 3
- Rise Time :
- 15ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 110pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Operating Temperature :
- -55°C~150°C TJ
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Channel Mode :
- Enhancement
- Minimum Operating Temperature :
- - 55 C
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Element Material :
- SILICON
- Fall Time (Typ) :
- 15 ns
- Element Configuration :
- Single
- Power Dissipation (Max) :
- 360mW (Ta)
- Product Type :
- MOSFET
- Rds On (Max) @ Id, Vgs :
- 12 Ω @ 200mA, 10V
- Number of Channels :
- 1
- FET Feature :
- --
- Power Dissipation :
- 360mW
- Continuous Drain Current (ID) :
- 120mA
- Drain-Source On-Volt :
- 220(V)
- Operating Temp Range :
- -55C to 150C
- Width :
- 1.3mm
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- RoHS :
- Details
- Polarity :
- P
- Continuous Drain Current Id :
- 120
- Transistor Polarity :
- P-Channel
- Drain to Source Voltage (Vdss) :
- 220V
- Peak Reflow Temperature (Cel) :
- 260
- Operating Mode :
- ENHANCEMENT MODE
- Manufacturer :
- Microchip
- Turn-Off Delay Time :
- 20 ns
- Turn On Delay Time :
- 10 ns
- Operating Temperature Classification :
- Military
- Maximum Operating Temperature :
- + 150 C
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Feedback Cap-Max (Crss) :
- 20 pF
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 2.4V @ 1mA
- Terminal Position :
- Dual
- Mounting Style :
- SMD/SMT
- Power Dissipation-Max :
- 360mW Ta
- Gate-Source Voltage (Max) :
- ±20(V)
- Product Status :
- Active
- FET Type :
- P-Channel
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Published :
- 2013
- Factory Lead Time :
- 5 Weeks
- Pin Count :
- 3
- Base Product Number :
- TP5322
- Product :
- MOSFET Small Signal
- Mount :
- Surface Mount
- Brand :
- Microchip Technology / Atmel
- Transistor Type :
- 1 P-Channel
- Qualification Status :
- Not Qualified
- Number of Pins :
- 3
- Supplier Device Package :
- TO-236AB (SOT23)
- Terminal Finish :
- Matte Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Mounting :
- Surface Mount
- Height :
- 950μm
- Configuration :
- Single
- Subcategory :
- MOSFETs
- Weight :
- 1.437803g
- Length :
- 2.9mm
- Current - Continuous Drain (Id) @ 25°C :
- 120mA Tj
- Product Category :
- MOSFET
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Type :
- Power MOSFET
- Drain to Source Breakdown Voltage :
- -220V
- Channel Type :
- P
- Rad Hardened :
- No
- Packaging :
- Tape and Reel (TR)
- Datasheets
- TP5322K1-G

P-Channel Tape & Reel (TR) 12 Ω @ 200mA, 10V ±20V 110pF @ 25V 220V TO-236-3, SC-59, SOT-23-3
TP5322K1-G Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 110pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -220V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -220V.As a result of its turn-off delay time, which is 20 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 220V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
TP5322K1-G Features
a continuous drain current (ID) of 120mA
a drain-to-source breakdown voltage of -220V voltage
the turn-off delay time is 20 ns
a 220V drain to source voltage (Vdss)
TP5322K1-G Applications
There are a lot of Microchip Technology
TP5322K1-G applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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