TP5322K1-G

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Mfr.Part #
TP5322K1-G
Manufacturer
Microchip Technology
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
MOSFET P-CH 220V 120MA TO236AB
Stock
2,060
In Stock :
2,060

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Turn-Off Delay Time :
20 ns
Mounting :
Surface Mount
Drain to Source Voltage (Vdss) :
220V
Polarity :
P
Rds On (Max) @ Id, Vgs :
12 Ω @ 200mA, 10V
Product Status :
Active
Operating Temp Range :
-55C to 150C
Transistor Type :
1 P-Channel
Gate-Source Voltage (Max) :
±20(V)
Additional Feature :
LOGIC LEVEL COMPATIBLE
Terminal Form :
Gull wing
Operating Temperature Classification :
Military
Pin Count :
3
Number of Terminations :
3
Qualification Status :
Not Qualified
Channel Mode :
Enhancement
Width :
1.3mm
Package / Case :
TO-236-3, SC-59, SOT-23-3
Turn On Delay Time :
10 ns
Vgs(th) (Max) @ Id :
2.4V @ 1mA
RoHS Status :
ROHS3 Compliant
FET Type :
P-Channel
Base Product Number :
TP5322
Operating Mode :
ENHANCEMENT MODE
Weight :
1.437803g
JESD-609 Code :
e3
Input Capacitance (Ciss) (Max) @ Vds :
110pF @ 25V
Height :
950μm
Number of Channels :
1
Length :
2.9mm
Power Dissipation (Max) :
360mW (Ta)
Continuous Drain Current :
0.12(A)
Peak Reflow Temperature (Cel) :
260
Series :
--
Minimum Operating Temperature :
- 55 C
Rad Hardened :
No
Time@Peak Reflow Temperature-Max (s) :
40
Drain-Source On-Volt :
220(V)
Factory Lead Time :
5 Weeks
Package Type :
SOT-23
Transistor Polarity :
P-Channel
Product Category :
MOSFET
Fall Time (Typ) :
15 ns
ECCN Code :
EAR99
Channel Type :
P
Mount :
Surface Mount
Product :
MOSFET Small Signal
Transistor Application :
SWITCHING
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Power Dissipation :
360mW
Current - Continuous Drain (Id) @ 25°C :
120mA Tj
Number of Elements :
1
Feedback Cap-Max (Crss) :
20 pF
Configuration :
Single
FET Feature :
--
Operating Temperature :
-55°C~150°C TJ
Mounting Type :
Surface Mount
Brand :
Microchip Technology / Atmel
Product Type :
MOSFET
Drain to Source Breakdown Voltage :
-220V
Number of Pins :
3
Maximum Operating Temperature :
+ 150 C
Gate to Source Voltage (Vgs) :
20V
RoHS :
Details
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Mounting Style :
SMD/SMT
Published :
2013
Subcategory :
MOSFETs
Rise Time :
15ns
Supplier Device Package :
TO-236AB (SOT23)
Vgs (Max) :
±20V
Continuous Drain Current Id :
120
Manufacturer :
Microchip
Power Dissipation-Max :
360mW Ta
Element Configuration :
Single
Terminal Position :
Dual
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Element Material :
SILICON
Type :
Power MOSFET
Packaging :
Tape and Reel (TR)
Terminal Finish :
Matte Tin (Sn)
Continuous Drain Current (ID) :
120mA
Datasheets
TP5322K1-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TP5322K1-G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-236-3, SC-59, SOT-23-3, Number of Channels:1, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Pins:3, Type:Power MOSFET, TP5322K1-G pinout, TP5322K1-G datasheet PDF, TP5322K1-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TP5322K1-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TP5322K1-G


P-Channel Tape & Reel (TR) 12 Ω @ 200mA, 10V ±20V 110pF @ 25V 220V TO-236-3, SC-59, SOT-23-3

TP5322K1-G Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 110pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -220V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -220V.As a result of its turn-off delay time, which is 20 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 220V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

TP5322K1-G Features


a continuous drain current (ID) of 120mA
a drain-to-source breakdown voltage of -220V voltage
the turn-off delay time is 20 ns
a 220V drain to source voltage (Vdss)


TP5322K1-G Applications


There are a lot of Microchip Technology
TP5322K1-G applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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