TP5322N8-G

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Mfr.Part #
TP5322N8-G
Manufacturer
Microchip Technology
Package / Case
TO-243AA
Datasheet
Download
Description
MOSFET P-CH 220V 260MA TO243AA
Stock
1
In Stock :
1

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Package :
Tape and Reel (TR)
Power Dissipation (Max) :
1.6W (Ta)
Product Type :
MOSFET
Number of Channels :
1
Channel Mode :
Enhancement
Vgs(th) (Max) @ Id :
2.4V @ 1mA
Turn-Off Delay Time :
20 ns
Supplier Device Package :
TO-243AA (SOT-89)
Continuous Drain Current (ID) :
-260mA
Input Capacitance (Ciss) (Max) @ Vds :
110pF @ 25V
Additional Feature :
LOGIC LEVEL COMPATIBLE
Package / Case :
TO-243AA
Qualification Status :
Not Qualified
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Factory Lead Time :
18 Weeks
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Number of Elements :
1
Terminal Finish :
Matte Tin (Sn)
Maximum Operating Temperature :
+ 150 C
Vgs (Max) :
±20V
FET Type :
P-Channel
Height :
1.6mm
RoHS Status :
ROHS3 Compliant
Configuration :
Single
Transistor Element Material :
SILICON
Current - Continuous Drain (Id) @ 25°C :
260mA Tj
Transistor Polarity :
P-Channel
Case Connection :
DRAIN
Terminal Form :
Flat
Gate to Source Voltage (Vgs) :
20V
Fall Time (Typ) :
15 ns
Mounting Style :
SMD/SMT
Product Category :
MOSFET
Base Product Number :
TP5322
Weight :
52.786812mg
Turn On Delay Time :
10 ns
Element Configuration :
Single
Resistance :
12Ohm
Width :
2.6mm
Drain Current-Max (Abs) (ID) :
0.26A
Operating Temperature :
-55°C~150°C TJ
Number of Pins :
4
JESD-609 Code :
e3
Drain to Source Voltage (Vdss) :
220V
Packaging :
Tape and Reel (TR)
Length :
4.6mm
FET Feature :
--
Number of Terminations :
3
Rds On (Max) @ Id, Vgs :
12 Ω @ 200mA, 10V
Manufacturer :
Microchip
Time@Peak Reflow Temperature-Max (s) :
40
Mounting Type :
Surface Mount
Transistor Application :
SWITCHING
Peak Reflow Temperature (Cel) :
260
Pulsed Drain Current-Max (IDM) :
0.9A
Subcategory :
MOSFETs
Minimum Operating Temperature :
- 55 C
Power Dissipation :
1.6W
Operating Mode :
ENHANCEMENT MODE
Series :
--
RoHS :
Details
Mount :
Surface Mount
Brand :
Microchip Technology
JESD-30 Code :
R-PSSO-F3
Product :
MOSFET Small Signal
Rise Time :
15ns
Transistor Type :
1 P-Channel
Drain to Source Breakdown Voltage :
-220V
ECCN Code :
EAR99
Power Dissipation-Max :
1.6W Ta
Published :
2013
Product Status :
Active
Datasheets
TP5322N8-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TP5322N8-G from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Package / Case:TO-243AA, Operating Temperature:-55°C~150°C TJ, Number of Pins:4, Number of Terminations:3, Mounting Type:Surface Mount, TP5322N8-G pinout, TP5322N8-G datasheet PDF, TP5322N8-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TP5322N8-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TP5322N8-G


P-Channel Tape & Reel (TR) 12 Ω @ 200mA, 10V ±20V 110pF @ 25V 220V TO-243AA

TP5322N8-G Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 110pF @ 25V.This device has a continuous drain current (ID) of [-260mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=-220V, the drain-source breakdown voltage is -220V.A device's drain current is its maximum continuous current, and this device's drain current is 0.26A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 20 ns.A maximum pulsed drain current of 0.9A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 220V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

TP5322N8-G Features


a continuous drain current (ID) of -260mA
a drain-to-source breakdown voltage of -220V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 0.9A.
a 220V drain to source voltage (Vdss)


TP5322N8-G Applications


There are a lot of Microchip Technology
TP5322N8-G applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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