TN6727A

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Power Dissipation :

1W

Emitter Base Voltage (VEBO) :

5V

Transistor Application :

SWITCHING

Collector Emitter Voltage (VCEO) :

40V

JESD-609 Code :

e3

Number of Terminations :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 1A 1V

Collector Emitter Breakdown Voltage :

40V

Number of Elements :

1

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

1.5A

Element Configuration :

Single

Current - Collector Cutoff (Max) :

100nA ICBO

Vce Saturation (Max) @ Ib, Ic :

500mV @ 100mA, 1A

Mounting Type :

Through Hole

ECCN Code :

EAR99

Radiation Hardening :

No

Max Power Dissipation :

1W

Collector Base Voltage (VCBO) :

50V

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Operating Temperature :

-55°C~150°C TJ

Max Breakdown Voltage :

45V

Lead Free :

Lead Free

Terminal Finish :

MATTE TIN

hFE Min :

50

Transistor Type :

PNP

Mount :

Through Hole

Number of Pins :

3

Packaging :

Bulk

Current Rating :

-1.5A

Polarity/Channel Type :

PNP

Voltage - Rated DC :

-40V

Terminal Position :

BOTTOM

Transistor Element Material :

SILICON