TN6715A_D75Z
- Mfr.Part #
- TN6715A_D75Z
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 40V 1.5A TO226
- Stock
- 41,684
- In Stock :
- 41,684
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Collector Emitter Breakdown (Max) :
- 40V
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tape and Box (TB)
- Package / Case :
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 1W
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 1A 1V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Type :
- NPN
- Supplier Device Package :
- TO-226
- Current - Collector (Ic) (Max) :
- 1.5A
- Datasheets
- TN6715A_D75Z
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 100nA ICBO TO-226-3, TO-92-3 Long Body (Formed Leads) Tape & Box (TB) Through Hole
TN6715A_D75Z Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 1A 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 100mA, 1A.TO-226 is the supplier device package for this product.This device displays a 40V maximum voltage - Collector Emitter Breakdown.
TN6715A_D75Z Features
the DC current gain for this device is 50 @ 1A 1V
the vce saturation(Max) is 500mV @ 100mA, 1A
the supplier device package of TO-226
TN6715A_D75Z Applications
There are a lot of ON Semiconductor
TN6715A_D75Z applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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