TN6726A

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Mfr.Part #
TN6726A
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
TRANS PNP 30V 1.5A TO226-3
Stock
150
In Stock :
150

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Radiation Hardening :
No
Terminal Finish :
Matte Tin (Sn)
Transistor Application :
SWITCHING
Collector Emitter Breakdown Voltage :
30V
JESD-609 Code :
e3
Collector Emitter Saturation Voltage :
500mV
Element Configuration :
Single
Packaging :
Bulk
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
DC Current Gain (hFE) (Min) @ Ic, Vce :
50 @ 1A 1V
RoHS Status :
RoHS Compliant
Operating Temperature :
-55°C~150°C TJ
Number of Terminations :
3
Number of Elements :
1
Width :
3.93mm
Max Collector Current :
1.5A
ECCN Code :
EAR99
Current Rating :
-1.5A
Lead Free :
Lead Free
Transistor Type :
PNP
Number of Pins :
3
Power Dissipation :
1W
Vce Saturation (Max) @ Ib, Ic :
500mV @ 100mA, 1A
Weight :
250mg
hFE Min :
50
Current - Collector Cutoff (Max) :
100nA ICBO
Transistor Element Material :
SILICON
Height :
7.87mm
Collector Emitter Voltage (VCEO) :
30V
Terminal Position :
BOTTOM
Mount :
Through Hole
Length :
4.7mm
Voltage - Rated DC :
-30V
Pbfree Code :
yes
Mounting Type :
Through Hole
Polarity/Channel Type :
PNP
Collector Base Voltage (VCBO) :
40V
Base Part Number :
TN6726A
Max Power Dissipation :
1W
Emitter Base Voltage (VEBO) :
5V
Datasheets
TN6726A
Introducing Transistors - Bipolar (BJT) - Single onsemi TN6726A from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-226-3, TO-92-3 (TO-226AA), Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Number of Pins:3, Mounting Type:Through Hole, Base Part Number:TN6726A, TN6726A pinout, TN6726A datasheet PDF, TN6726A amp .Beyond Transistors - Bipolar (BJT) - Single onsemi TN6726A ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi TN6726A


PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole

TN6726A Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 50 @ 1A 1V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 100mA, 1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -1.5A.Collector current can be as low as 1.5A volts at its maximum.

TN6726A Features


the DC current gain for this device is 50 @ 1A 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -1.5A


TN6726A Applications


There are a lot of ON Semiconductor
TN6726A applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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