TN2130K1-G

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Mfr.Part #
TN2130K1-G
Manufacturer
Microchip Technology
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
MOSFET N-CH 300V 85MA TO236AB
Stock
6,217
In Stock :
6,217

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Application :
SWITCHING
Number of Terminations :
3
Feedback Cap-Max (Crss) :
5 pF
Package Type :
SOT-23
Drain Current-Max (Abs) (ID) :
0.085A
Mounting Type :
Surface Mount
Power Dissipation :
360mW
Operating Temperature :
-55°C~150°C TJ
Base Product Number :
TN2130
Power Dissipation (Max) :
360mW (Tc)
Product Type :
MOSFET
Gate-Source Voltage (Max) :
±20(V)
Product Category :
MOSFET
Radiation Hardening :
No
Rise Time :
7ns
Rds On (Max) @ Id, Vgs :
25 Ω @ 120mA, 4.5V
Continuous Drain Current :
0.085(A)
Type :
Power MOSFET
Gate to Source Voltage (Vgs) :
20V
RoHS Status :
ROHS3 Compliant
Mount :
Surface Mount
Time@Peak Reflow Temperature-Max (s) :
40
MSL :
MSL 1 - Unlimited
Additional Feature :
LOW THRESHOLD
Weight :
1.437803g
Supplier Device Package :
TO-236AB (SOT23)
Number of Elements :
1
Number of Pins :
3
Packaging :
Tape and Reel (TR)
Brand :
Microchip Technology / Atmel
Transistor Element Material :
SILICON
Terminal Finish :
Matte Tin (Sn)
RoHS :
Details
Published :
2013
Terminal Position :
Dual
Vgs(th) (Max) @ Id :
2.4V @ 1mA
Transistor Type :
1 N-Channel
Element Configuration :
Single
FET Type :
N-Channel
Channel Type :
N
Vgs (Max) :
±20V
Configuration :
Single
Mounting Style :
SMD/SMT
Turn-Off Delay Time :
12 ns
Drain to Source Voltage (Vdss) :
300V
Minimum Operating Temperature :
- 55 C
Rad Hardened :
No
Width :
1.3mm
Package / Case :
TO-236-3, SC-59, SOT-23-3
Factory Lead Time :
2 Weeks
Polarity :
N
Lead Free :
Lead Free
Pin Count :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Series :
--
Operating Temperature Classification :
Military
Length :
2.9mm
Channel Mode :
Enhancement
Height :
950μm
Product Status :
Active
Number of Channels :
1
Operating Mode :
ENHANCEMENT MODE
Turn On Delay Time :
10 ns
Operating Temp Range :
-55C to 150C
Continuous Drain Current (ID) :
85mA
Input Capacitance (Ciss) (Max) @ Vds :
50pF @ 25V
ECCN Code :
EAR99
JESD-609 Code :
e3
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Manufacturer :
Microchip
FET Feature :
--
Terminal Form :
Gull wing
Qualification :
-
Drain to Source Breakdown Voltage :
300V
Drive Voltage (Max Rds On,Min Rds On) :
4.5V
Current - Continuous Drain (Id) @ 25°C :
85mA Tj
Power Dissipation-Max :
360mW Tc
Fall Time (Typ) :
7 ns
Peak Reflow Temperature (Cel) :
260
Mounting :
Surface Mount
Maximum Operating Temperature :
+ 150 C
Transistor Polarity :
N-Channel
Product :
MOSFET Small Signal
Drain-Source On-Volt :
300(V)
Continuous Drain Current Id :
85
Datasheets
TN2130K1-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TN2130K1-G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Type:Power MOSFET, Number of Pins:3, Package / Case:TO-236-3, SC-59, SOT-23-3, Number of Channels:1, TN2130K1-G pinout, TN2130K1-G datasheet PDF, TN2130K1-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TN2130K1-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TN2130K1-G


N-Channel Tape & Reel (TR) 25 Ω @ 120mA, 4.5V ±20V 50pF @ 25V 300V TO-236-3, SC-59, SOT-23-3

TN2130K1-G Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 50pF @ 25V.This device conducts a continuous drain current (ID) of 85mA, which is the maximum continuous current transistor can conduct.Using VGS=300V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 300V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 0.085A.When the device is turned off, a turn-off delay time of 12 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 10 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 300V.In order to reduce power consumption, this device uses a drive voltage of 4.5V volts (4.5V).

TN2130K1-G Features


a continuous drain current (ID) of 85mA
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 12 ns
a 300V drain to source voltage (Vdss)


TN2130K1-G Applications


There are a lot of Microchip Technology
TN2130K1-G applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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