TN2130K1-G
- Mfr.Part #
- TN2130K1-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 85MA TO236AB
- Stock
- 6,217
- In Stock :
- 6,217
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Feedback Cap-Max (Crss) :
- 5 pF
- Package Type :
- SOT-23
- Drain Current-Max (Abs) (ID) :
- 0.085A
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 360mW
- Operating Temperature :
- -55°C~150°C TJ
- Base Product Number :
- TN2130
- Power Dissipation (Max) :
- 360mW (Tc)
- Product Type :
- MOSFET
- Gate-Source Voltage (Max) :
- ±20(V)
- Product Category :
- MOSFET
- Radiation Hardening :
- No
- Rise Time :
- 7ns
- Rds On (Max) @ Id, Vgs :
- 25 Ω @ 120mA, 4.5V
- Continuous Drain Current :
- 0.085(A)
- Type :
- Power MOSFET
- Gate to Source Voltage (Vgs) :
- 20V
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 40
- MSL :
- MSL 1 - Unlimited
- Additional Feature :
- LOW THRESHOLD
- Weight :
- 1.437803g
- Supplier Device Package :
- TO-236AB (SOT23)
- Number of Elements :
- 1
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- Brand :
- Microchip Technology / Atmel
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Matte Tin (Sn)
- RoHS :
- Details
- Published :
- 2013
- Terminal Position :
- Dual
- Vgs(th) (Max) @ Id :
- 2.4V @ 1mA
- Transistor Type :
- 1 N-Channel
- Element Configuration :
- Single
- FET Type :
- N-Channel
- Channel Type :
- N
- Vgs (Max) :
- ±20V
- Configuration :
- Single
- Mounting Style :
- SMD/SMT
- Turn-Off Delay Time :
- 12 ns
- Drain to Source Voltage (Vdss) :
- 300V
- Minimum Operating Temperature :
- - 55 C
- Rad Hardened :
- No
- Width :
- 1.3mm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Factory Lead Time :
- 2 Weeks
- Polarity :
- N
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- --
- Operating Temperature Classification :
- Military
- Length :
- 2.9mm
- Channel Mode :
- Enhancement
- Height :
- 950μm
- Product Status :
- Active
- Number of Channels :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Turn On Delay Time :
- 10 ns
- Operating Temp Range :
- -55C to 150C
- Continuous Drain Current (ID) :
- 85mA
- Input Capacitance (Ciss) (Max) @ Vds :
- 50pF @ 25V
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Manufacturer :
- Microchip
- FET Feature :
- --
- Terminal Form :
- Gull wing
- Qualification :
- -
- Drain to Source Breakdown Voltage :
- 300V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V
- Current - Continuous Drain (Id) @ 25°C :
- 85mA Tj
- Power Dissipation-Max :
- 360mW Tc
- Fall Time (Typ) :
- 7 ns
- Peak Reflow Temperature (Cel) :
- 260
- Mounting :
- Surface Mount
- Maximum Operating Temperature :
- + 150 C
- Transistor Polarity :
- N-Channel
- Product :
- MOSFET Small Signal
- Drain-Source On-Volt :
- 300(V)
- Continuous Drain Current Id :
- 85
- Datasheets
- TN2130K1-G

N-Channel Tape & Reel (TR) 25 Ω @ 120mA, 4.5V ±20V 50pF @ 25V 300V TO-236-3, SC-59, SOT-23-3
TN2130K1-G Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 50pF @ 25V.This device conducts a continuous drain current (ID) of 85mA, which is the maximum continuous current transistor can conduct.Using VGS=300V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 300V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 0.085A.When the device is turned off, a turn-off delay time of 12 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 10 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 300V.In order to reduce power consumption, this device uses a drive voltage of 4.5V volts (4.5V).
TN2130K1-G Features
a continuous drain current (ID) of 85mA
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 12 ns
a 300V drain to source voltage (Vdss)
TN2130K1-G Applications
There are a lot of Microchip Technology
TN2130K1-G applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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