TN2124K1-G

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Mfr.Part #
TN2124K1-G
Manufacturer
Microchip Technology
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
MOSFET N-CH 240V 134MA TO236AB
Stock
44,913
In Stock :
44,913

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Brand :
Microchip Technology / Atmel
Height :
950μm
Number of Pins :
3
Feedback Cap-Max (Crss) :
5 pF
Mount :
Surface Mount
Rds On (Max) @ Id, Vgs :
15 Ω @ 120mA, 4.5V
Fall Time (Typ) :
2 ns
Qualification Status :
Not Qualified
Mounting Type :
Surface Mount
Mounting :
Surface Mount
Gate to Source Voltage (Vgs) :
20V
Width :
1.3mm
Turn-Off Delay Time :
7 ns
Product Category :
MOSFET
Transistor Application :
SWITCHING
Weight :
1.437803g
Vgs (Max) :
±20V
Product Status :
Active
Rad Hardened :
No
Pin Count :
3
Vgs(th) (Max) @ Id :
2V @ 1mA
Transistor Element Material :
SILICON
Maximum Operating Temperature :
+ 150 C
Rise Time :
2ns
Factory Lead Time :
5 Weeks
Type :
Power MOSFET
Transistor Type :
1 N-Channel
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Channel Mode :
Enhancement
Manufacturer :
Microchip
Mounting Style :
SMD/SMT
Minimum Operating Temperature :
- 55 C
Continuous Drain Current :
0.134(A)
FET Feature :
--
Published :
2005
Length :
2.9mm
RoHS :
Details
Operating Mode :
ENHANCEMENT MODE
Gate-Source Voltage (Max) :
±20(V)
Number of Channels :
1
Transistor Polarity :
N-Channel
MSL :
MSL 1 - Unlimited
Power Dissipation-Max :
360mW Tc
Drain to Source Voltage (Vdss) :
240V
Operating Temperature :
-55°C~150°C TJ
FET Type :
N-Channel
Product :
MOSFET Small Signal
Turn On Delay Time :
4 ns
Input Capacitance (Ciss) (Max) @ Vds :
50pF @ 25V
Supplier Device Package :
TO-236AB (SOT23)
Drive Voltage (Max Rds On,Min Rds On) :
3V 4.5V
Peak Reflow Temperature (Cel) :
260
Element Configuration :
Single
Terminal Form :
Gull wing
Qualification :
-
Current - Continuous Drain (Id) @ 25°C :
134mA Tj
Channel Type :
N
Number of Terminations :
3
Power Dissipation :
360mW
Drain-Source On-Volt :
240(V)
Operating Temperature Classification :
Military
Base Product Number :
TN2124
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements :
1
Package / Case :
TO-236-3, SC-59, SOT-23-3
Drain to Source Breakdown Voltage :
240V
Continuous Drain Current (ID) :
134mA
Terminal Finish :
Matte Tin (Sn)
Polarity :
N
Operating Temp Range :
-55C to 150C
Power Dissipation (Max) :
360mW (Tc)
Series :
--
RoHS Status :
ROHS3 Compliant
Additional Feature :
LOW THRESHOLD
Packaging :
Tape and Reel (TR)
Time@Peak Reflow Temperature-Max (s) :
40
Continuous Drain Current Id :
134
Configuration :
Single
Package Type :
SOT-23
Terminal Position :
Dual
JESD-609 Code :
e3
Product Type :
MOSFET
Datasheets
TN2124K1-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TN2124K1-G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Surface Mount, Type:Power MOSFET, Number of Channels:1, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Package / Case:TO-236-3, SC-59, SOT-23-3, TN2124K1-G pinout, TN2124K1-G datasheet PDF, TN2124K1-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TN2124K1-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TN2124K1-G


N-Channel Tape & Reel (TR) 15 Ω @ 120mA, 4.5V ±20V 50pF @ 25V 240V TO-236-3, SC-59, SOT-23-3

TN2124K1-G Overview


A device's maximum input capacitance is 50pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 134mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=240V, and this device has a drain-to-source breakdown voltage of 240V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 7 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 4 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 240V drain to source voltage (Vdss).This device uses no drive voltage (3V 4.5V) to reduce its overall power consumption.

TN2124K1-G Features


a continuous drain current (ID) of 134mA
a drain-to-source breakdown voltage of 240V voltage
the turn-off delay time is 7 ns
a 240V drain to source voltage (Vdss)


TN2124K1-G Applications


There are a lot of Microchip Technology
TN2124K1-G applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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