TN2124K1-G

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Mfr.Part #
TN2124K1-G
Manufacturer
Microchip Technology
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
MOSFET N-CH 240V 134MA TO236AB
Stock
44,913
In Stock :
44,913

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Published :
2005
Manufacturer :
Microchip
Product :
MOSFET Small Signal
Channel Type :
N
Pin Count :
3
Vgs(th) (Max) @ Id :
2V @ 1mA
ECCN Code :
EAR99
Packaging :
Tape and Reel (TR)
Continuous Drain Current (ID) :
134mA
Transistor Element Material :
SILICON
Package / Case :
TO-236-3, SC-59, SOT-23-3
Series :
--
Vgs (Max) :
±20V
Qualification :
-
RoHS Status :
ROHS3 Compliant
Feedback Cap-Max (Crss) :
5 pF
Minimum Operating Temperature :
- 55 C
Peak Reflow Temperature (Cel) :
260
Current - Continuous Drain (Id) @ 25°C :
134mA Tj
Length :
2.9mm
Number of Pins :
3
Factory Lead Time :
5 Weeks
RoHS :
Details
Terminal Position :
Dual
Drain to Source Voltage (Vdss) :
240V
Number of Terminations :
3
Width :
1.3mm
Drain to Source Breakdown Voltage :
240V
Terminal Form :
Gull wing
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Polarity :
N
FET Type :
N-Channel
Rds On (Max) @ Id, Vgs :
15 Ω @ 120mA, 4.5V
Transistor Polarity :
N-Channel
Drain-Source On-Volt :
240(V)
JESD-609 Code :
e3
Power Dissipation (Max) :
360mW (Tc)
Transistor Application :
SWITCHING
Operating Temperature Classification :
Military
Operating Temp Range :
-55C to 150C
Product Category :
MOSFET
Package Type :
SOT-23
Qualification Status :
Not Qualified
Gate-Source Voltage (Max) :
±20(V)
Brand :
Microchip Technology / Atmel
Time@Peak Reflow Temperature-Max (s) :
40
Terminal Finish :
Matte Tin (Sn)
Input Capacitance (Ciss) (Max) @ Vds :
50pF @ 25V
Additional Feature :
LOW THRESHOLD
Power Dissipation-Max :
360mW Tc
Product Status :
Active
Weight :
1.437803g
Element Configuration :
Single
Number of Elements :
1
Turn-Off Delay Time :
7 ns
Channel Mode :
Enhancement
MSL :
MSL 1 - Unlimited
Gate to Source Voltage (Vgs) :
20V
Mounting Style :
SMD/SMT
Rad Hardened :
No
Mounting Type :
Surface Mount
Product Type :
MOSFET
Fall Time (Typ) :
2 ns
Power Dissipation :
360mW
Mount :
Surface Mount
Drive Voltage (Max Rds On,Min Rds On) :
3V 4.5V
Continuous Drain Current Id :
134
FET Feature :
--
Configuration :
Single
Mounting :
Surface Mount
Height :
950μm
Transistor Type :
1 N-Channel
Continuous Drain Current :
0.134(A)
Turn On Delay Time :
4 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Mode :
ENHANCEMENT MODE
Supplier Device Package :
TO-236AB (SOT23)
Maximum Operating Temperature :
+ 150 C
Rise Time :
2ns
Type :
Power MOSFET
Number of Channels :
1
Base Product Number :
TN2124
Operating Temperature :
-55°C~150°C TJ
Datasheets
TN2124K1-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TN2124K1-G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-236-3, SC-59, SOT-23-3, Number of Pins:3, Number of Terminations:3, Mounting Type:Surface Mount, Type:Power MOSFET, Number of Channels:1, Operating Temperature:-55°C~150°C TJ, TN2124K1-G pinout, TN2124K1-G datasheet PDF, TN2124K1-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TN2124K1-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TN2124K1-G


N-Channel Tape & Reel (TR) 15 Ω @ 120mA, 4.5V ±20V 50pF @ 25V 240V TO-236-3, SC-59, SOT-23-3

TN2124K1-G Overview


A device's maximum input capacitance is 50pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 134mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=240V, and this device has a drain-to-source breakdown voltage of 240V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 7 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 4 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 240V drain to source voltage (Vdss).This device uses no drive voltage (3V 4.5V) to reduce its overall power consumption.

TN2124K1-G Features


a continuous drain current (ID) of 134mA
a drain-to-source breakdown voltage of 240V voltage
the turn-off delay time is 7 ns
a 240V drain to source voltage (Vdss)


TN2124K1-G Applications


There are a lot of Microchip Technology
TN2124K1-G applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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