TN2124K1-G
- Mfr.Part #
- TN2124K1-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 240V 134MA TO236AB
- Stock
- 44,913
- In Stock :
- 44,913
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Element Configuration :
- Single
- Product :
- MOSFET Small Signal
- Transistor Element Material :
- SILICON
- Length :
- 2.9mm
- Drain to Source Voltage (Vdss) :
- 240V
- Brand :
- Microchip Technology / Atmel
- Power Dissipation (Max) :
- 360mW (Tc)
- Polarity :
- N
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- Product Type :
- MOSFET
- Qualification :
- -
- Package Type :
- SOT-23
- Product Category :
- MOSFET
- Operating Temperature Classification :
- Military
- Number of Elements :
- 1
- Drain-Source On-Volt :
- 240(V)
- Continuous Drain Current :
- 0.134(A)
- Weight :
- 1.437803g
- FET Type :
- N-Channel
- Type :
- Power MOSFET
- Transistor Type :
- 1 N-Channel
- Fall Time (Typ) :
- 2 ns
- Manufacturer :
- Microchip
- Drain to Source Breakdown Voltage :
- 240V
- Mounting Type :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Vgs (Max) :
- ±20V
- Terminal Position :
- Dual
- Terminal Form :
- Gull wing
- MSL :
- MSL 1 - Unlimited
- RoHS :
- Details
- Maximum Operating Temperature :
- + 150 C
- Gate-Source Voltage (Max) :
- ±20(V)
- FET Feature :
- --
- Mounting Style :
- SMD/SMT
- Power Dissipation :
- 360mW
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 15 Ω @ 120mA, 4.5V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Height :
- 950μm
- Continuous Drain Current Id :
- 134
- RoHS Status :
- ROHS3 Compliant
- Product Status :
- Active
- ECCN Code :
- EAR99
- Number of Channels :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Polarity :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 3V 4.5V
- Width :
- 1.3mm
- Published :
- 2005
- Peak Reflow Temperature (Cel) :
- 260
- Rise Time :
- 2ns
- Gate to Source Voltage (Vgs) :
- 20V
- Mounting :
- Surface Mount
- Power Dissipation-Max :
- 360mW Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 50pF @ 25V
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e3
- Supplier Device Package :
- TO-236AB (SOT23)
- Base Product Number :
- TN2124
- Qualification Status :
- Not Qualified
- Feedback Cap-Max (Crss) :
- 5 pF
- Terminal Finish :
- Matte Tin (Sn)
- Rad Hardened :
- No
- Turn On Delay Time :
- 4 ns
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Operating Temp Range :
- -55C to 150C
- Continuous Drain Current (ID) :
- 134mA
- Additional Feature :
- LOW THRESHOLD
- Channel Mode :
- Enhancement
- Configuration :
- Single
- Turn-Off Delay Time :
- 7 ns
- Pin Count :
- 3
- Series :
- --
- Factory Lead Time :
- 5 Weeks
- Number of Terminations :
- 3
- Channel Type :
- N
- Current - Continuous Drain (Id) @ 25°C :
- 134mA Tj
- Minimum Operating Temperature :
- - 55 C
- Datasheets
- TN2124K1-G
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N-Channel Tape & Reel (TR) 15 Ω @ 120mA, 4.5V ±20V 50pF @ 25V 240V TO-236-3, SC-59, SOT-23-3
TN2124K1-G Overview
A device's maximum input capacitance is 50pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 134mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=240V, and this device has a drain-to-source breakdown voltage of 240V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 7 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 4 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 240V drain to source voltage (Vdss).This device uses no drive voltage (3V 4.5V) to reduce its overall power consumption.
TN2124K1-G Features
a continuous drain current (ID) of 134mA
a drain-to-source breakdown voltage of 240V voltage
the turn-off delay time is 7 ns
a 240V drain to source voltage (Vdss)
TN2124K1-G Applications
There are a lot of Microchip Technology
TN2124K1-G applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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