TN2106K1-G

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Mfr.Part #
TN2106K1-G
Manufacturer
Microchip Technology
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
MOSFET N-CH 60V 280MA TO236AB
Stock
1
In Stock :
1

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Channel Type :
N
Manufacturer :
Microchip
Drain to Source Voltage (Vdss) :
60V
Height :
950μm
Channel Mode :
Enhancement
Power Dissipation :
360mW
Rds On (Max) @ Id, Vgs :
2.5 Ω @ 500mA, 10V
Contact Plating :
Tin
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Brand :
Microchip Technology
Weight :
1.437803g
Number of Elements per Chip :
1
Qualification :
-
MSL :
MSL 1 - Unlimited
Package / Case :
TO-236-3, SC-59, SOT-23-3
Mounting Style :
SMD/SMT
Mount :
Surface Mount
ECCN Code :
EAR99
Published :
2003
Vgs(th) (Max) @ Id :
2V @ 1mA
Transistor Polarity :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
280mA Tj
FET Type :
N-Channel
Radiation Hardening :
No
Operating Temperature :
-55°C~150°C TJ
FET Feature :
--
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Operating Mode :
ENHANCEMENT MODE
Time@Peak Reflow Temperature-Max (s) :
40
Turn-Off Delay Time :
6 ns
Additional Feature :
LOW THRESHOLD, LOGIC LEVEL COMPATIBLE
Transistor Application :
SWITCHING
Input Capacitance (Ciss) (Max) @ Vds :
50pF @ 25V
Drain to Source Breakdown Voltage :
60V
Power Dissipation-Max :
360mW Tc
Peak Reflow Temperature (Cel) :
260
Turn On Delay Time :
3 ns
Transistor Type :
1 N-Channel
Product Status :
Active
Product Type :
MOSFET
Pin Count :
3
Number of Channels :
1
Supplier Device Package :
TO-236AB (SOT23)
Minimum Operating Temperature :
-55 °C
Number of Elements :
1
Mounting Type :
Surface Mount
Continuous Drain Current (ID) :
280mA
Maximum Operating Temperature :
+150 °C
Packaging :
Tape and Reel (TR)
Width :
1.3mm
RoHS Status :
ROHS3 Compliant
Terminal Position :
Dual
Configuration :
Single
Continuous Drain Current Id :
280
Terminal Form :
Gull wing
Type :
FET
Drain Current-Max (Abs) (ID) :
0.28A
Feedback Cap-Max (Crss) :
8 pF
Element Configuration :
Single
Vgs (Max) :
±20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package Type :
TO-236
Rise Time :
5ns
Transistor Element Material :
SILICON
JESD-609 Code :
e3
Factory Lead Time :
5 Weeks
Product Category :
MOSFET
Product :
MOSFET Small Signal
Length :
2.9mm
Gate to Source Voltage (Vgs) :
20V
RoHS :
Details
Number of Terminations :
3
Base Product Number :
TN2106
Power Dissipation (Max) :
360mW (Tc)
Number of Pins :
3
Fall Time (Typ) :
5 ns
Series :
--
Datasheets
TN2106K1-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TN2106K1-G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-236-3, SC-59, SOT-23-3, Operating Temperature:-55°C~150°C TJ, Number of Channels:1, Mounting Type:Surface Mount, Type:FET, Number of Terminations:3, Number of Pins:3, TN2106K1-G pinout, TN2106K1-G datasheet PDF, TN2106K1-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TN2106K1-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TN2106K1-G


N-Channel Tape & Reel (TR) 2.5 Ω @ 500mA, 10V ±20V 50pF @ 25V 60V TO-236-3, SC-59, SOT-23-3

TN2106K1-G Overview


The maximum input capacitance of this device is 50pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 280mA.When VGS=60V, and ID flows to VDS at 60VVDS, the drain-source breakdown voltage is 60V in this device.As shown in the table below, the drain current of this device is 0.28A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 6 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 3 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 60V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

TN2106K1-G Features


a continuous drain current (ID) of 280mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 6 ns
a 60V drain to source voltage (Vdss)


TN2106K1-G Applications


There are a lot of Microchip Technology
TN2106K1-G applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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