TN2106K1-G
- Mfr.Part #
- TN2106K1-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 280MA TO236AB
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Channel Type :
- N
- Manufacturer :
- Microchip
- Drain to Source Voltage (Vdss) :
- 60V
- Height :
- 950μm
- Channel Mode :
- Enhancement
- Power Dissipation :
- 360mW
- Rds On (Max) @ Id, Vgs :
- 2.5 Ω @ 500mA, 10V
- Contact Plating :
- Tin
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Brand :
- Microchip Technology
- Weight :
- 1.437803g
- Number of Elements per Chip :
- 1
- Qualification :
- -
- MSL :
- MSL 1 - Unlimited
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Mounting Style :
- SMD/SMT
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Published :
- 2003
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Transistor Polarity :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 280mA Tj
- FET Type :
- N-Channel
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~150°C TJ
- FET Feature :
- --
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Turn-Off Delay Time :
- 6 ns
- Additional Feature :
- LOW THRESHOLD, LOGIC LEVEL COMPATIBLE
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 50pF @ 25V
- Drain to Source Breakdown Voltage :
- 60V
- Power Dissipation-Max :
- 360mW Tc
- Peak Reflow Temperature (Cel) :
- 260
- Turn On Delay Time :
- 3 ns
- Transistor Type :
- 1 N-Channel
- Product Status :
- Active
- Product Type :
- MOSFET
- Pin Count :
- 3
- Number of Channels :
- 1
- Supplier Device Package :
- TO-236AB (SOT23)
- Minimum Operating Temperature :
- -55 °C
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Continuous Drain Current (ID) :
- 280mA
- Maximum Operating Temperature :
- +150 °C
- Packaging :
- Tape and Reel (TR)
- Width :
- 1.3mm
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Configuration :
- Single
- Continuous Drain Current Id :
- 280
- Terminal Form :
- Gull wing
- Type :
- FET
- Drain Current-Max (Abs) (ID) :
- 0.28A
- Feedback Cap-Max (Crss) :
- 8 pF
- Element Configuration :
- Single
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package Type :
- TO-236
- Rise Time :
- 5ns
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Factory Lead Time :
- 5 Weeks
- Product Category :
- MOSFET
- Product :
- MOSFET Small Signal
- Length :
- 2.9mm
- Gate to Source Voltage (Vgs) :
- 20V
- RoHS :
- Details
- Number of Terminations :
- 3
- Base Product Number :
- TN2106
- Power Dissipation (Max) :
- 360mW (Tc)
- Number of Pins :
- 3
- Fall Time (Typ) :
- 5 ns
- Series :
- --
- Datasheets
- TN2106K1-G
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N-Channel Tape & Reel (TR) 2.5 Ω @ 500mA, 10V ±20V 50pF @ 25V 60V TO-236-3, SC-59, SOT-23-3
TN2106K1-G Overview
The maximum input capacitance of this device is 50pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 280mA.When VGS=60V, and ID flows to VDS at 60VVDS, the drain-source breakdown voltage is 60V in this device.As shown in the table below, the drain current of this device is 0.28A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 6 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 3 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 60V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
TN2106K1-G Features
a continuous drain current (ID) of 280mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 6 ns
a 60V drain to source voltage (Vdss)
TN2106K1-G Applications
There are a lot of Microchip Technology
TN2106K1-G applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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