TK7P65W,RQ

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

90 mJ

Reach Compliance Code :

Unknown

Vgs (Max) :

±30V

Terminal Form :

Gull wing

Power Dissipation-Max :

60W Tc

Factory Lead Time :

16 Weeks

Published :

2015

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

27.2A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

DS Breakdown Voltage-Min :

650V

Transistor Element Material :

SILICON

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

490pF @ 300V

Number of Terminations :

2

Rds On (Max) @ Id, Vgs :

800m Ω @ 3.4A, 10V

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

FET Type :

N-Channel

Operating Temperature :

150°C TJ

Packaging :

Cut Tape (CT)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.8Ohm

Current - Continuous Drain (Id) @ 25°C :

6.8A Ta

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Mount :

Surface Mount

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Drain to Source Voltage (Vdss) :

650V

Continuous Drain Current (ID) :

6.8A

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

RoHS Compliant

Series :

DTMOSIV

Mounting Type :

Surface Mount

Pbfree Code :

yes

JESD-30 Code :

R-PSSO-G2