TK7P60W,RVQ

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Mfr.Part #
TK7P60W,RVQ
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N CH 600V 7A DPAK
Stock
1,656
In Stock :
1,656

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - FETs, MOSFETs - Single
Mount :
Surface Mount
Operating Temperature :
150°C TJ
RoHS Status :
RoHS Compliant
Fall Time (Typ) :
7 ns
Mounting Type :
Surface Mount
Rds On (Max) @ Id, Vgs :
600m Ω @ 3.5A, 10V
Series :
DTMOSIV
Drive Voltage (Max Rds On,Min Rds On) :
10V
Current - Continuous Drain (Id) @ 25°C :
7A Ta
FET Type :
N-Channel
Drain to Source Breakdown Voltage :
600V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id :
3.7V @ 350μA
Published :
2014
Input Capacitance (Ciss) (Max) @ Vds :
490pF @ 300V
Gate Charge (Qg) (Max) @ Vgs :
15nC @ 10V
Element Configuration :
Single
Factory Lead Time :
16 Weeks
Continuous Drain Current (ID) :
7A
FET Feature :
Super Junction
Rise Time :
18ns
Power Dissipation-Max :
60W Tc
Power Dissipation :
60W
Gate to Source Voltage (Vgs) :
30V
Packaging :
Tape and Reel (TR)
Turn-Off Delay Time :
55 ns
Vgs (Max) :
±30V
Datasheets
TK7P60W,RVQ
Introducing Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK7P60W,RVQ from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, TK7P60W,RVQ pinout, TK7P60W,RVQ datasheet PDF, TK7P60W,RVQ amp .Beyond Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK7P60W,RVQ ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation TK7P60W,RVQ


N-Channel Tape & Reel (TR) 600m Ω @ 3.5A, 10V ±30V 490pF @ 300V 15nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

TK7P60W,RVQ Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 490pF @ 300V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 7A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.It is [55 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.A device like this reduces its overall power consumption when it uses drive voltage (10V).

TK7P60W,RVQ Features


a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 55 ns


TK7P60W,RVQ Applications


There are a lot of Toshiba Semiconductor and Storage
TK7P60W,RVQ applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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