TK7P50D(T6RSS-Q)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate to Source Voltage (Vgs) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

600pF @ 25V

Supplier Device Package :

D-Pak

RoHS Status :

RoHS Compliant

Max Operating Temperature :

150°C

Series :

π-MOSVII

Fall Time (Typ) :

8 ns

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

7A Ta

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±30V

Drain to Source Voltage (Vdss) :

500V

Input Capacitance :

600pF

Rds On (Max) @ Id, Vgs :

1.22Ohm @ 3.5A, 10V

Rds On Max :

1.22 Ω

Operating Temperature :

150°C TJ

Radiation Hardening :

No

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

100W

Rise Time :

18ns

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Published :

2010

Vgs(th) (Max) @ Id :

4.4V @ 1mA

Factory Lead Time :

16 Weeks

Min Operating Temperature :

-55°C

Mounting Type :

Surface Mount

Power Dissipation-Max :

100W Tc

Continuous Drain Current (ID) :

7A