TK60S06K3L(T6L1,NQ

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

60V

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

8m Ω @ 30A, 10V

Pulsed Drain Current-Max (IDM) :

120A

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Continuous Drain Current (ID) :

60A

Terminal Position :

Single

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

60A Ta

Published :

2012

JESD-30 Code :

R-PSSO-G2

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Reference Standard :

AEC-Q101

Terminal Form :

Gull wing

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

13 ns

Input Capacitance (Ciss) (Max) @ Vds :

2900pF @ 10V

Vgs(th) (Max) @ Id :

3V @ 1mA

Mounting Type :

Surface Mount

Factory Lead Time :

12 Weeks

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation-Max :

88W Tc

Number of Pins :

3

Rise Time :

24ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

U-MOSIV

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

60 ns

Operating Temperature :

175°C TJ

Avalanche Energy Rating (Eas) :

89 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Turn On Delay Time :

11 ns

Radiation Hardening :

No

DS Breakdown Voltage-Min :

60V