TK60P03M1,RQ(S

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

60A

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

6.4mOhm @ 30A, 10V

Vgs (Max) :

±20V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance :

2.7nF

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Max Operating Temperature :

150°C

Drain to Source Voltage (Vdss) :

30V

Current - Continuous Drain (Id) @ 25°C :

60A Ta

Input Capacitance (Ciss) (Max) @ Vds :

2700pF @ 10V

Rds On Max :

6.4 mΩ

Power Dissipation-Max :

63W Tc

Supplier Device Package :

DPAK

Factory Lead Time :

16 Weeks

Operating Temperature :

150°C TJ

Min Operating Temperature :

-55°C

Rise Time :

4.3ns

FET Type :

N-Channel

Fall Time (Typ) :

11 ns

Published :

2009

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

RoHS Compliant

Mounting Type :

Surface Mount

Series :

U-MOSVI-H

Vgs(th) (Max) @ Id :

2.3V @ 500μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount