TK60D08J1(Q)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

60A

Mounting Type :

Through Hole

Drain to Source Breakdown Voltage :

75V

RoHS Status :

RoHS Compliant

REACH SVHC :

No SVHC

Operating Temperature :

150°C TJ

Element Configuration :

Single

Fall Time (Typ) :

15 ns

Drain to Source Resistance :

78mOhm

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

7.8mOhm @ 30A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

60A Ta

Rise Time :

5ns

Gate Charge (Qg) (Max) @ Vgs :

86nC @ 10V

Input Capacitance :

5.45nF

Packaging :

Tube

Power Dissipation-Max :

140W Tc

Min Operating Temperature :

-55°C

Number of Elements :

1

Package / Case :

TO-220-3

Mount :

Through Hole

Vgs(th) (Max) @ Id :

2.3V @ 1mA

Supplier Device Package :

TO-220(W)

Input Capacitance (Ciss) (Max) @ Vds :

5450pF @ 10V

Threshold Voltage :

1.1V

Rds On Max :

7.8 mΩ

Number of Pins :

67

Power Dissipation :

140W

Max Operating Temperature :

150°C

Drain to Source Voltage (Vdss) :

75V

Published :

2009

Vgs (Max) :

±20V