TK50P04M1(T6RSS-Q)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

U-MOSVI-H

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Rise Time :

22ns

Input Capacitance (Ciss) (Max) @ Vds :

2600pF @ 10V

Mounting Type :

Surface Mount

Width :

6.1mm

Length :

10mm

Height :

2.3mm

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

50A Ta

FET Type :

N-Channel

Fall Time (Typ) :

10 ns

Number of Elements :

1

Element Configuration :

Single

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2011

Turn-Off Delay Time :

77 ns

Operating Temperature :

150°C TJ

Turn On Delay Time :

29 ns

Drain to Source Resistance :

3.8mOhm

Rds On (Max) @ Id, Vgs :

8.7mOhm @ 25A, 10V

Min Operating Temperature :

-55°C

Input Capacitance :

2.6nF

RoHS Status :

RoHS Compliant

Factory Lead Time :

16 Weeks

Power Dissipation-Max :

60W Tc

Vgs(th) (Max) @ Id :

2.3V @ 500μA

Supplier Device Package :

DP

Mount :

Surface Mount, Through Hole

Power Dissipation :

60W

Rds On Max :

8.7 mΩ

Continuous Drain Current (ID) :

50A

Max Operating Temperature :

150°C

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

40V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V