TK50E06K3A,S1X(S
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- Mfr.Part #
- TK50E06K3A,S1X(S
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 50A TO220-3
- Stock
- 26,532
- In Stock ：
- 26,532
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Package / Case :
- TO-220-3
- Rds On Max :
- 8.5 mΩ
- Published :
- 2009
- Packaging :
- Tube
- Max Power Dissipation :
- 104W
- Radiation Hardening :
- No
- Continuous Drain Current (ID) :
- 50A
- Power Dissipation :
- 104W
- Mounting Type :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 54nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 8.5mOhm @ 25A, 10V
- Factory Lead Time :
- 12 Weeks
- FET Type :
- N-Channel
- RoHS Status :
- RoHS Compliant
- Drain to Source Voltage (Vdss) :
- 60V
- Supplier Device Package :
- TO-220-3
- Series :
- U-MOSIV
- Datasheets
- TK50E06K3A,S1X(S
N-Channel Tube 8.5mOhm @ 25A, 10V 54nC @ 10V 60V TO-220-3
TK50E06K3A,S1X(S Overview
Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 50A.The drain-to-source voltage (Vdss) of this transistor needs to be at 60V in order to operate.
TK50E06K3A,S1X(S Features
a continuous drain current (ID) of 50A
a 60V drain to source voltage (Vdss)
TK50E06K3A,S1X(S Applications
There are a lot of Toshiba Semiconductor and Storage
TK50E06K3A,S1X(S applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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