TK50P03M1(T6RSS-Q)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2011

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

50A Ta

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

47W Tc

Vgs(th) (Max) @ Id :

2.3V @ 200μA

Fall Time (Typ) :

22 ns

Rise Time :

20ns

Input Capacitance (Ciss) (Max) @ Vds :

1700pF @ 10V

Mount :

Surface Mount

Min Operating Temperature :

-55°C

Radiation Hardening :

No

Series :

U-MOSVI-H

Factory Lead Time :

16 Weeks

Input Capacitance :

1.7nF

Gate Charge (Qg) (Max) @ Vgs :

25.3nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

7.5mOhm @ 25A, 10V

Operating Temperature :

150°C TJ

Number of Pins :

3

Continuous Drain Current (ID) :

50A

Max Operating Temperature :

150°C

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package :

DP

Drain to Source Voltage (Vdss) :

30V

Mounting Type :

Surface Mount

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On Max :

7.5 mΩ

RoHS Status :

RoHS Compliant

Gate to Source Voltage (Vgs) :

20V