TK3R2A08QM,S4X

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Package :

Tube

Operating Temperature :

175°C

Vgs (Max) :

±20V

Number of Channels :

1 Channel

Current - Continuous Drain (Id) @ 25°C :

92A (Tc)

Supplier Device Package :

TO-220SIS

Rds On (Max) @ Id, Vgs :

3.2mOhm @ 46A, 10V

Transistor Polarity :

N-Channel

FET Feature :

-

Package / Case :

TO-220-3 Full Pack

Vgs(th) (Max) @ Id :

3.5V @ 1.3mA

Gate Charge (Qg) (Max) @ Vgs :

102 nC @ 10 V

Channel Mode :

Enhancement

Product Status :

Active

Series :

U-MOSX-H

FET Type :

N-Channel

Maximum Operating Temperature :

+ 175 C

Power Dissipation (Max) :

45W (Tc)

Mounting Style :

Through Hole

Mounting Type :

Through Hole

Drive Voltage (Max Rds On, Min Rds On) :

6V, 10V

Minimum Operating Temperature :

-

Drain to Source Voltage (Vdss) :

80 V

Input Capacitance (Ciss) (Max) @ Vds :

7670 pF @ 40 V