TK3R1P04PL,RQ

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Mfr.Part #
TK3R1P04PL,RQ
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CHANNEL 40V 58A DPAK
Stock
10,623
In Stock :
10,623

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - FETs, MOSFETs - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tape and Reel (TR)
Vgs (Max) :
±20V
FET Type :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
58A Tc
Gate Charge (Qg) (Max) @ Vgs :
60nC @ 10V
Published :
2017
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
RoHS Status :
RoHS Compliant
Factory Lead Time :
16 Weeks
Operating Temperature :
175°C
Rds On (Max) @ Id, Vgs :
3.1m Ω @ 29A, 10V
Power Dissipation-Max :
87W Tc
Series :
U-MOSIX-H
Input Capacitance (Ciss) (Max) @ Vds :
4670pF @ 20V
Mounting Type :
Surface Mount
Drain to Source Voltage (Vdss) :
40V
Vgs(th) (Max) @ Id :
2.4V @ 500μA
Datasheets
TK3R1P04PL,RQ
Introducing Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK3R1P04PL,RQ from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Operating Temperature:175°C, Mounting Type:Surface Mount, TK3R1P04PL,RQ pinout, TK3R1P04PL,RQ datasheet PDF, TK3R1P04PL,RQ amp .Beyond Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK3R1P04PL,RQ ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation TK3R1P04PL,RQ


N-Channel Tape & Reel (TR) 3.1m Ω @ 29A, 10V ±20V 4670pF @ 20V 60nC @ 10V 40V TO-252-3, DPak (2 Leads + Tab), SC-63

TK3R1P04PL,RQ Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4670pF @ 20V.This transistor requires a drain-source voltage (Vdss) of 40V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).

TK3R1P04PL,RQ Features


a 40V drain to source voltage (Vdss)


TK3R1P04PL,RQ Applications


There are a lot of Toshiba Semiconductor and Storage
TK3R1P04PL,RQ applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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