TK3R1E04PL,S1X
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- Mfr.Part #
- TK3R1E04PL,S1X
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 100A TO220
- Stock
- 90
- In Stock ：
- 90
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Packaging :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 63.4nC @ 10V
- Mounting Type :
- Through Hole
- Package / Case :
- TO-220-3
- Vgs (Max) :
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4670pF @ 20V
- Factory Lead Time :
- 12 Weeks
- Operating Temperature :
- 175°C TJ
- Published :
- 2016
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Series :
- U-MOSIX-H
- Vgs(th) (Max) @ Id :
- 2.4V @ 500μA
- Drain to Source Voltage (Vdss) :
- 40V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- RoHS Status :
- RoHS Compliant
- Rds On (Max) @ Id, Vgs :
- 3.8m Ω @ 30A, 4.5V
- Power Dissipation-Max :
- 87W Tc
- Datasheets
- TK3R1E04PL,S1X
N-Channel Tube 3.8m Ω @ 30A, 4.5V ±20V 4670pF @ 20V 63.4nC @ 10V 40V TO-220-3
TK3R1E04PL,S1X Overview
A device's maximal input capacitance is 4670pF @ 20V, which is defined as the capacitance between its input terminals with either input grounded.This transistor requires a 40V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
TK3R1E04PL,S1X Features
a 40V drain to source voltage (Vdss)
TK3R1E04PL,S1X Applications
There are a lot of Toshiba Semiconductor and Storage
TK3R1E04PL,S1X applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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